實驗室著作

A. Referred paper

 2019-2016

1. C. T. Kuo, H. Y. Lee, and S. C. Lee, “ Evidence of “wired” drug-cell communication through micro-barrier well-array devices”, 2019, AIP Advances 9, 095025.
2. S. C. Lee, 2019, “ Complex Space-Time and Complex Quantum Mind—An Unified Platform to Explain the Large, Medium, and Small Scaled Mysteries of Universe and Consciousness”, Philosophy Study, Vol. 9, No. 5, 246-252.
3. C. H. Hong, M. R. Tang, S. H. Hsu, C. H. Yang, C. S. Tseng, Y. C. Ko, C. S. Guo, C. W. Yang, S. C. Lee, Enhanced early immune response of leptospiral outer membrane protein LipL32 stimulated by narrow band mid-infrared exposure, Journal of Photochemistry & Photobiology, B: Biology. 198 (2019) 1-7.
4. T. H. Peng, C. H. Hong, M. R. Tang, and S. C. Lee, 2019, “Photoresponse of homostructure WSe2 rectifying diode”, AIP Advances, 9, 075010.
5. W. L. Huang, M. R. Tang, C. H. Hong, and S. C. Lee, 2019 “Investigation of bond oscillation assisted olfactory perception by exciting the molecular chemical bonds using specific IR wavelengths”, AIP Advances, 9, 075020.
6. Y. Hsiao, P. Y. Chang, K. L. Fan, N. C. Hsu, and S. C. Lee, 2018,   “Black phosphorus with a unique rectangular shape and its anisotropic properties”, AIP Advances, 8, 105216.
7. M. R. Tang, H. H. Hsiao, C. H. Hong, W. L. Huang, and S. C. Lee, 2018, “An uncooled LWIR-detector with LSPR enhancement and selective narrow absorption”, IEEE Photon. Technol. Lett., Vol 30, No.13 , 1206-1209 .
8. C. H. Hong, C. F. Hsieh, C. S. Tseng, W. C. Huang, C. Y. Guo, S. Lin, and S. C. Lee, 2017, “A nanobiosening method based on force measurement of antibody-antigen interaction for direct detection of enterovirus 71 by the chemically modified atomic force microscopic probe”, Microbial Pathogenesis, Vol. 111, 292-297.
9. C. S. Chang Chien, H. M. Chang, W. T. Lee, M. R. Tang, C. H. Wu, and S. C. Lee, 2017, “High Performance MoS2 TFT using Graphene Contact First Process”, AIP Advance, 8, 085018.
10. W. L. Huang, H. H. Hsiao, C. Y. Lin, M. R. Tang, and S. C. Lee, 2017, “Waveguide resonances with selectable polarization in an infrared thermal emitter”, AIP Advance, 7,085112.
11. Y. J. Huang and S. C. Lee, 2017, ” Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design”, Sci. Rep .   7 , 9679, doi:10.1038/s41598-017-08939-2.
12. W. L. Huang, H. H. Hsiao, M. R. Tang, and S. C. Lee, 2016, “Triple-wavelength infrared plasmonic thermal emitter using hybrid dielectric materials in periodic arrangement”, Appl. Phys. Lett., 109, 063107.
13. Y. J. Huang, T. H. Shen, L. H. Lee, C. Y. Wen, and S. C. Lee, 2016, “Low-Power Resistive Random Access Memory by Confining the Formation of Conducting Filaments”, AIP Advances, 6, 065022.
14. M. Y. Lin, T. H. Tsai, L. J. Hsiao, W. C. Tu, S. H. Wu, L. A. Wang, S. C. Lee, and H. Y. Lin, 2016, “Design and Fabrication of Nano-Structure for Three-Dimensional Display Application”, IEEE Photon. Technol. Lett., Vol 28, No. 8 , 884-886 .
15. Y. J. Huang, S. C. Chao, D. H. Lien, C. Y. Wen, J. H. He and S. C. Lee, 2016, “Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions”, Nature Sci. Rep. 6 , 23945; doi: 10.1038/srep23945.
16. C. T. Kuo, C. Y. Chi, P. Y. Wu, F. T. Chuang, Y. C. Lin, H. K. Liu, G. S. Huang, T. C. Tsai, Andrew M. Wo, H. y. Lee, and S. C. Lee , 2016, “ Observation of “wired” cell communication over 10-μm and 20-μm poly(dimethylsiloxane) barriers in tetracycline inducible expression systems” , J. Appl. Phys. 119, 024702.

 2015-2011

1. M Amani, D. H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. KC, M. Dubey, K. Cho, R. M. Wallace, S. C. Lee, J. H. He, J. W. Ager III, X. Zhang, E. Yablonovitch, A. Javey , 2015, “ Near-unity photoluminescence quantum yield in MoS2”, Science, Vol. 350 no. 6264 pp. 1065-1068.
2. M. Y. Lin, C. H. Wang, S. W. Chang, S. C. Lee, and S. Y. Lin, 2015, “Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition”, J. Phys. D: Appl. Phys. 48, 295106.
3. T. K. Hsiao, B.W. Huang, H. K. Chang, S. C. Liou, M. W. Chu, S. C. Lee, and C. W. Chang, 2015, Micron-scale Ballistic Thermal Conduction and Suppressed Thermal Conductivity in Heterogeneously Interfaced Nanowires, Phys. Rev. B 91, 035406.
4. H. Y. Chang; M. H. Li; T. C. Huang; C. L. Hsu; S. R. Tsai; S. C. Lee; H. C. Huang; and H. F. Juan, 2015, “Quantitative Proteomics Reveals Middle Infrared Radiation-interfered Networks in Breast Cancer Cells”, J. Proteome Research, 14(2), 1250-1262.
5. S. R. Tsai, R. Yin, Y. Y. Huang, B. C. Sheu, S. C. Lee, and M. R. Hamblin, 2014, “Low-Level Light Therapy Potentiates Npe6-mediated Photodynamic Therapy in a Human Osteosarcoma Cell Line via Increased ATP”, Photodiagnosis and Photodynamic Therapy, 12, 123-130.
6. M. Y. Lin, C. E. Chang, C. H. Wang, C. F. Su, C. Chen, S. C. Lee, and S. Y. Lin, 2014, “ Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS2/graphene hetero-structures by chemical vapor depositions”, Appl. Phys. Lett., 105, 073501.
7. C. T. Kuo, F. T. Chuang, P. Y. Wu, Y. C. Lin, H. K. Liu, G. S. Huang, T. C. Tsai, C. Y. Chi, A. M. Wo, H. Y. Lee, and S. C. Lee, 2014, “Experimental Demonstration of Bindingless Signal Delivery in Human Cells via Microfluidics”, J. Appl. Phys., 116, 044702.
8. H. H. Chen, Y. C. Su, W. L. Huang, C. Y. Kuo, W. C. Tian, M. J. Chen and S. C. Lee, 2014, “A plasmonic infrared photodetector with narrow bandwidth absorption”, Appl. Phys. Lett. 105, 023109.
9. M. Y. Lin, C. F. Su, S. C. Lee, and  S. Y. Lin *, 2014, “The Growth Mechanisms of Graphene Directly on Sapphire Substrates by Using the Chemical Vapor Deposition”, J. Appl. Phys., vol. 115, no. 22, pp. 223510.
10. P. Y. Chen, H. H. Hsiao, C. I. Ho, C. C. Ho, W. L. Lee, H. C. Chang, S. C. Lee, J. Z. Chen, and I. C. Cheng, 2014, “Periodic anti-ring back reflectors for hydrogenated amorphous silicon thin-film solar cells”, Optics Express(Vol. 22), Iss. S4, pp. A1128–A1136.
11. M. Y. Lin, Y. H. Chen, C. H. Wang, C. F. Su, S. W. Chang, S. C. Lee, and S. Y. Lin, 2014, “Field Effect of In-plane Gates with Different Gap Sizes on the Fermi Level Tuning of Graphene Channels”, Appl. Phys. Lett. vol. 104, no. 18, pp. 183503.
12. M. Y. Lin, T. H. Tsai, Y. L. Kang, Y. C. Chen, Y. H. Huang, Y. J. Chen, X. Fang, H.  Y. Lin, W. K. Choi, L. A. Wang, C. C. Wu, and S. C. Lee, 2014 “Design and Fabrication of birefringent nano-grating structure for circularly polarized light emission”, Opt. Express, 22(S7), 7388.
13. H. H Chen, H. H. Hsiao, H. C. Chang, W. L. Huang and S. C. Lee, 2014 “Double wavelength infrared emission by localized surface plasmonic thermal emitter” , Appl. Phys. Lett, 104, 083114.
14. M. Y. Lin, Y. L. Kang, Y. C. Chen, T. H. Tsai, S. C. Lin, Y. H. Huang, Y. J. Chen, C. Y. Lu, H. Y. Lin, L. A. Wang, C. C. Wu and S. C. Lee, 2014, “Plasmonic ITO-Free Polymer Solar Cell”, Opt. Express 22(S2), A438–A445.
15. M. Y. Lin, Y. H. Chen, C. F. Su, S. W. Chang, S. C. Lee, and S. Y. Lin, 2013, “Fermi-level shifts in Graphene Transistors with Dual-cut Channels scraped by Atomic Force Microscope Tips”, Appl. Phys. Lett., 104, 023511.
16. M. Y. Lin, W. C. Guo, M. H. Wu, P. Y. Wang, S. C. Lee and  S. Y. Lin *, 2013. “Graphene Films Grown at Low Substrate Temperature and The Growth Model by Using MBE Technique”, J. Crystal Growth vol. 378, no. 1, pp. 333-336.
17. J. H. Lee,   Z. M. Wu,   Y. M. Liao,   Y. R. Wu, S.Y. Lin, and S.C. Lee, 2013, ” The Operation Principle of the Well in Quantum Dot stack Infrared Photodetector “, J  Appl. Phys., 114, 244504.
18. C. H. Cheng, Y. C. Chen, P. W. Wu, H. H. Chen, S. C. Lee, 2013, “Improved Performance of Plasmonic Thermal Emitter via Incorporation of Gold Nanoparticles”,   IEEE Photon. Technol. Lett. , Vol.25, No.17, 1727-1730. 
19. T. K. Hsiao, H. K. Chang, S. C. Liou, M. W. Chu, S. C. Lee, and C. W. Chang, 2013, “Observation of room temperature ballistic thermal conduction persisting over 8.3 micrometers in SiGe nanowires”, Nature Nanotechnology, Vol.8, 534-538.
20. M. Y. Lin, H. H. Chen, K. H. Hsu, Y. H. Huang, Y. J. Chen, H. Y. Lin, Y. K. Wu, Lon A. Wang, C. C. Wu, and S. C. Lee, 2013,”White Organic Light Emitting Diode with Linearly Polarized Emission, “IEEE Photon. Technol. Lett., Vol. 25, No. 14, 1321-1323.
21. C. I. Ho , W. C. Liang , D. J. Yeh , V. C. Su , P. C. Yang , S. Y. Chen , T. T. Yang , J. H. Lee , C. H. Kuan , I. C. Cheng, S. C. Lee, 2013, “Influence of the Absorber Layer Thickness and Rod Length on the Performance of Three-dimensional Nanorods Thin Film Hydrogenated Amorphous Silicon Solar cells,” J. Appl. Phys., 113, 163106 .
22. W. C. Liang and S. C. Lee, 2013, “ Vorticity, Gyroscopic Precession, and Spin-curvature Force”, Phys. Rev. D. 87, 044024.
23. H. Y. Chang, M. H. Shih, H. C. Huang, S. R. Tsai, H. F. Juan, S. C. Lee, 2013, “Middle Infrared Radiation Induces G 2 /M Cell Cycle Arrest in A549 Lung Cancer Cell”, PLoS One, Vol. 8, Issue 1, e54117.
24. M. Y. Lin, W. C. Guo, M. H. Wu, P. Y. Wang, T. H. Liu, C. W. Pao, C. C. Chang, S. C. Lee and  S. Y. Lin , 2013, “Low-temperature grown graphene films by using molecular beam epitaxy”, Appl. Phys. Lett. vol. 101, no. 22, pp. 221911.
25. Y. C. Chen , Y. T. Chang, H. H. Chen, F. T. Chuang, and S. C. Lee, 2013, ” Enhanced Transmission of Higher Order Plasmon Modes with Random Au Nanoparticles in Periodic Hole Arrays ,” I EEE Photon. Technol. Lett. , Vol 25, No. 1, 47-50.
26. Y. C. Chen, H. H. Hsiao, C. T. Lu, Y. T. Chang, H. H. Chen, F. T. Chuang, S. Y. Huang, C. W. Yu, H. C. Chang, and S. C. Lee, 2012, “The Effect of Paired Apertures in a Periodic Hole Array on Higher Order Plasmon Modes”, IEEE Photon. Technol. Lett., Vol 24, No. 22, 2052-2055.
27. H. H. Chen, Y. T. Chang, S. Y. Huang, F. T. Chuang, C. W. Yu and S. C. Lee, 2012, “Two infrared emission modes with different wavelengths and orthogonal polarization in a waveguide thermal emitter”, J. Appl. Phys., 112, 074325.
28. C. I. Ho , D. J. Yeh , V. C. Su , C. H. Yang , P. C. Yang , M. Y. Pu , C. H. Kuan , I. C. Cheng and S. C. Lee, 2012, “Plasmonic multilayer nanoparticles enhanced photocurrent in thin film hydrogenated amorphous silicon (a-Si:H) solar cells”, J. Appl. Phys., 112, 023113.
29. F. T. Chuang, P. Y. Chen, Y. W. Jiang, M. Farhat, H. H. Chen, Y. C. Chen, S. C. Lee, 2012, “Nanoprojection lithography using self-assembled interference modules for manufacturing plasmonic gratings”, IEEE Photon. Technol. Lett., Vol.24, No. 15, 1273-1275.
30. J. H. Lee, C. Y. Chang, C. H. Li, S. Y. Lin,   and Si-Chen Lee, 2012, ” Performance Improvement of AlGaAs/GaAs QWIP with NH 3  Plasma Treatment”, IEEE Journal of Quantum Electronics, Vol.48, No.7, 922-926.
31. S. Y. Huang, H. H. Chen, H. H. Hsiao, P. E. Chang, Y. T. Chang, C. H. Chen, Y. W. Jiang, H. C. Chang and S. C. Lee, 201 2, “Triple Peaks Plasmonic Thermal Emitter with Selectable Wavelength Using Periodic Block Pattern as Top Layer”, IEEE Photon. Technol. Lett., Vol. 24, No. 10, 833-835.
32. H. K. Chang and S. C. Lee, 2012, “Morphology Control and Optical Properties of SiGe Nanostructures Grown on Glass Substrate,” Nanoscale Research Lett., Vol. 7, No.1, 155.
33. W. C. Tu, Y. T. Chang, H. P. Wang, C. H. Yang, C. T. Huang, J. H. He, and S. C. Lee, 2012, “Improved Light Scattering and Surface Plasmon Tuning in Amorphous Silicon Solar Cells by Double-Walled Carbon Nanotubes,” Solar Energy Materials and Solar Cells, 101, 200-203.
34. C. T. Huang, Y. C. Chen, S. C. Lee, 2012, “Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1-xSbx strain reducing layer”, Appl. Phys. Lett., 100, 043512 .
35. C. J. Huang, C. H. Yang, C. Y. Hsueh, J. H. Lee; Y. T. Chang, S. C. Lee, 2012, “Performance Enhancement of Silicon Nanowire Memory by Tunnel Oxynitride,” IEEE Electron Device Lett., Vol. 33, no. 1, pp., 20-22 .
36. M. Y. Lin, Y. S. Sheng, S. Y. Lin, and S. C. Lee, 2012, “Painted Graphitic Carbon Films Formed underneath Ni Templates”, Physica Status Solidi C vol. 9, no. 2, pp. 179-182.
37. S. R. Tsai, T. C. Huang, C. M. Liang, H. Y. Chang, Y. T. Chang, H. C. Huang, H. F. Juan, S. C. Lee , 2011, “The effect of narrow bandwidth infrared radiation on the growth of Escherichia coli”, Appl. Phys. Lett., 99, 163704.
38. C. H. Yang, C. Y. Hsueh, D. J. Yeh, C. I Ho, C. M. Leu, Y. H. Yeh, and S. C. Lee, 2011, “Hydrogenated Amorphous Silicon Solar Cells on Textured Flexible Substrate Copied from a Textured Glass Substrate Template”,  IEEE Electron Device Lett. , Vol. 32, NO. 9, 1254-1256.
39. C. J. Huang, C. H. Yang, C. Y. Hsueh, J. H. Lee, Y. T. Chang, and S.C. Lee, 2011, “Stress Effects on Self-Aligned Silicon Nanowires Junctionless Field Effect Transistors”, IEEE Electron Device Lett., Vol. 32, NO. 9, 1194-1196.
40. S. Y. Huang, H. H. Hsiao, Y. T. Chang, H. H. Chen, Y. W. Jiang, H. F. Huang, P. E. Chang, H. C. Chang and S. C. Lee, 2011, “Extraordinary Transmission through a Silver Film Perforated with Bowtie-Shaped Aperture Array in Mid i nfrared Region”, Appl. Phys. Lett. , 98, 253107.
41. M. N. Abbas, C. W. Cheng, Y. C. Chang, M. H. Shih, H. H. Chen, and S. C. Lee, 2011, “ Angle and polarization independent narrow-band thermal emitter made of metallic disk on SiO2”, Appl. Phys. Lett, 98, 121116.
42. Y. W. Jiang, F. T. Chuang, H. H. Chen, and S. C. Lee, 2011, “Self-Assembled Rippling Structure Based on Metal- Elastomer Composite for Tunable Plasmonics”, IEEE Photon. Technol. Lett., Vol. 23, 670.
43. H. F. Huang, Y. W. Jiang, H. H. Chen, Y. T. Wu, Y. T. Chang, F. T. Chuang, and S. C. Lee, 2011, “Localized shape resonance on silver film perforated by H-shaped and more complex shaped hole arrays”, Optics express, Vol. 19, Iss. 6, pp. 5225–5231.
44. P. E. Chang, Y. W. Jiang, H. H. Chen, Y. T. Chang, Y. T. Wu, Lawrence D. C. Tzuang, Y. H. Ye, and S. C. Lee, 2011, “Wavelength Selective Plasmonic Thermal Emitter by Polarization Utilizing Fabry-Perot Type Resonances ”, Appl. Phys. Lett., 98, 073111.

 2010-2006

1. H. K. Chang and S. C. Lee, 2010, “The growth and radial analysis of Si/Ge core-shell nanowires”, Appl. Phys. Lett. , 97, 251912.
2. W. C. Tu, Y. T. Chang, C. H. Yang, D. J. Yeh , C. I. Ho, C. Y. Hsueh, and S. C. Lee, 2010, “Hydrogenated Amorphous Silicon Solar Cell on Glass Substrate Patterned by Hexagonal Nano-Cylinder Array”, Appl. Phys. Lett. , 97, 193109.
3. H. H. Chen, Y. W. Jiang, Y.T. Wu, P. E. Chang , Y. T. Chang, H. F. Huang, S. C. Lee, 2010, “Narrow Bandwidth and Highly Polarized Ratio Infrared Thermal Emitter”, Appl. Phys. Lett. , 97, 163112.
4. Y. T. Wu, Y. T. Chang, Y. W. Jiang, P. E. Chang, Y. H. Ye, D. C. Tzuang, H. H. Chen, H. F. Huang, and S. C. Lee, 2010,” Extraordinary Transmission through Ag/Si Structure Perforated with Rhombus Lattice Hole Arrays”, IEEE Photon. Technol. Lett., Vol. 22, No. 20, 1482-1484
5. Y. T. Wu, Y. T. Chang, H. H. Chen, H. F. Huang, D. C. Tzuang, Y. W. Jiang, P. E. Chang, and S. C. Lee, 2010, “Narrow Bandwidth Mid-Infrared Waveguide Thermal Emitters”, , IEEE Photon. Tech. Lett. Vol. 22, No. 15, 1159-1161.
6. C. H. Liou, C. W. Hsieh, C. H. Hsieh, D. Y. Chen, C. H. Wang, J. H. Chen, S. C. Lee, 2010, “ Detection of nighttime melatonin level in Chinese Original Quiet Sitting”, Journal of the Formosan Medical Association, Vol. 109, Issue 10, 694-701.
7. J. H. Lee, Y. T. Chang, C. J. Huang, S. Y. Lin, and S. C. Lee, 2010 “Two-color Quantum Dot Infrared Photodetectors With Periodic Cross Metal Hole Array Contact”, IEEE Photon. Technol. Lett., vol 22, No 8, pp.577-579.
8. Y. W. Jiang, Y. T. Wu, M. W. Tsai, P. E. Chang, D. C. Tzuang, Y. H. Ye, and S. C. Lee , 2009, “Characteristics of a waveguide mode in a trilayer Ag/SiO2 /Au plasmonic thermal emitter” Opt. Lett., 34 , 3089.
9. Y. T. Chang, Y. T. Wu, J.H. Lee, H. H. Chen, C. Y. Hsueh, H. F. Huang, Y. W. Jiang, P. E. Chang, and S. C. Lee, 2009, “ Emission properties of Ag/dielectric/Ag plasmonic thermal emitter with different lattice type, hole shape, and dielectric material”, Appl. Phys. Lett. 95 , 213102.
10. J. H. Lee, J. H. Dai, C. F. Chan and S. C. Lee , 2009, “In(Ga)As Quantum Ring Terahertz Photodetector With Cutoff Wavelength at 175 um”, IEEE Photon. Technol. Lett., vol.21, No.11, pp. 721-723.
11. L. D. C. Tzuang, Y. W. Jiang, Y. H. Ye, Y. T. Chang, Y. T. Wu, and S. C. Lee , 2009, “ Polarization Rotation of Shape Resonance in Archimedean Spiral Slots”, Appl. Phys. Lett., 94, 091912.
12. H. K. Fu, Y. W. Jiang, M. W. Tsai, S. C. Lee and Y. F. Chen, 2009, “A Thermal Emitter with selective wavelength : Based on the coupling between Photonic Crystals and Surface Plasmon Plaritons”, J. Appl. Phys., 105, 033505.
13. Y. W. Jiang, L. D. C. Tzuang, Y. H. Ye, M. W. Tsai, C. Y. Chen, Y. T. Wu and S. C. Lee , 2009, “ The Effect of Wood’s Anomalies on the Profile of Extraordinary Transmission Spectra through Metal Periodic Arrays of Rectangular Subwavelength Holes with Different Aspect Ratio”, Optics Express, 17 , pp.2631-2637.
14. Y. H. Ye, Y. W. Jiang, M. W. Tsai, Y. T. Chang, C. Y. Chen, D. C. Tzuang, Y. T. Wu and S. C. Lee , 2008, “ Coupling of surface plasmons in a Ag/SiO2/Ag plasmonic thermal emitter with grating on top Ag”, Appl. Phys. Lett., 93 , 263106.
15. J. H. Dai, J. H. Lee and S. C. Lee, 2008, “ Transition Mechanism of InAs Quantum Dot to Quantum Ring Revealed by Photoluminescence Spectra”, IEEE Photon. Technol. Lett., Vol. 20, pp. 1372-1374.
16. Y. H. Ye, Y. Wei Jiang , M. W. Tsai, Y. T. Chang, C. Y. Chen, D. C. Tzuang, Y. T. Wu and S. C. Lee , 2008, “Localized surface plasmon polaritons in Ag/SiO2/Ag plasmonic thermal emitter ”, Appl. Phys. Lett., 93 , 033113 .
17. J. H. Dai, J. H. Lee, Y. L. Lin and S. C. Lee, 2008, “ In(Ga)As Quantum Rings for Terahertz Detectors”, Japanese J. Appl. Phys., 47, No. 4, pp. 2924 – 2926.
18. Y. T. Chang, D. C. Tzuang, Y. T. Wu, C. F. Chan, Y. H. Ye, T. H. Hung, Y. F. Chen and S. C. Lee , 2008, “ Surface Plasmon on Aluminum Concentric Rings Arranged in a Long-Range Periodic Structure”, Appl. Phys. Lett., 92, 253111.
19. Y. T. Chang, Y. H. Ye, D. C. Tzuang, Y. T. Wu, C. H. Yang, C. F. Chan, Y. W. Jiang and S. C. Lee , 2008, “ Localized Surface Plasmons in Al/Si structure and Ag/SiO2/Ag Emitter with Different Concentric Metal-Rings” , Appl. Phys. Lett., 92, 233109.
20. P. C. Yang, C. Y. Hsueh, C. H. Yang, J. H. Lee, H. W. Lin, H. Y. Chang, C. Y. Chang and S. C. Lee , 2008, “Uniform Square Polycrystalline Silicon Fabricated by Employing Periodic Metallic Pads and SiON Absorption Layer for Thin Film Transistors”, IEEE Trans. Electron Devices, ED-55, pp. 2212-2217.
21. P. C. Yang, P. S. Kuo and S. C. Lee , 2008, “Multichannel Poly-Si Thin Film Transistors Prepared by Excimer Laser Annealing with Channel Width Comparable or Smaller than the Grain Size”, IEEE Trans. Electron Devices, ED-55, pp. 2129-2133.
22. C. M. Wang, Y. C. Chang, M. W. Tsai, Y. H. Ye, C. Y. Chen, Y. W. Jiang, S. C. Lee , and D. P. Tsai, 2008, “Angle-Independent Infrared Filter Assisted by Localized Surface Plasmon Polariton”, IEEE Photon. Technol. Lett., Vol. 20, pp. 1103-1105.
23. T. Yu Chien, C. T. Chia, T. C. Lin and S. C. Lee , 2008, “Photoluminescence and Raman Studies of Nanocrystalline Silicon Enclosed in a SiO 2 Shell”, Chinese J. Phys., 46, pp. 91-97.
24. J. H. Dai, J. H. Lee, and S. C. Lee , 2008, “Annealing Effect on the Formation of In(Ga)As Quantum Rings from InAs Quantum Dots”, IEEE Photon. Technol. Lett., Vol. 20, pp. 165-167.
25. C. Y. Chen, M. W. Tsai, Y. W. Jiang, Y. H. Ye, Y. T. Chang and S. C. Lee , 2007, “ Coupling of surface plasmons between two silver films in a plasmonic thermal emitter”, Appl. Phys. Lett. 91, 243111.
26. M. W. Tsai, C. Y. Chen, Y. W. Jiang, Y. H. Ye, H. Y. Chang, T. H. Chuang and S. C. Lee , 2007, “Coupling between surface plasmons via thermal emission of a dielectric layer sandwiched between two metal periodic layers”, Appl. Phys. Lett., 91, 213104.
27. C. M. Wang, Y. C. Chang, M. W. Tsai, Y. H. Ye, C. Y. Chen, Y. W. Jiang, S. C. Lee and D. P. Tsai, 2007, “Reflection and Emission Properties of an Infrared Emitter”, Optics Express, 15, No. 22, pp. 14673-14678.
28. C. Y. Chang, H. Y. Chang, C. Y. Chen, M. W. Tsai, Y. T. Chang, S. C. Lee and S. F. Tang, 2007, “ Wavelength selective quantum dot infrared photodetector with periodic metal hole arrays”, Appl. Phys. Lett., 91, 163107.
29. C. Y. Chen, M. W. Tsai, T. H. Chuang, Y. T. Chang, and S. C. Lee , 2007, “Extraordinary transmission through a silver film perforated with cross shaped hole arrays in a square lattice”, Appl. Phys. Lett., 91, 063108.
30. J. H. Dai, Y. I. Lin and S. C. Lee , 2007, “ Voltage-Tunable Dual Band In(Ga)As Quantum Ring Infrared Photodetector”, IEEE Photon. Technol. Lett., 19, no. 19, pp.1511-1513.
31. Y. T. Chang, T. H. Chuang, M. W. Tsai, M. J. Lai and S. C. Lee , 2007, “ Observation of Fabry-Perot Type Surface Plasmon on Ag Film with Perforated Short-Range 3 3 Hole Array Arranged in Long-Range Periodic Structure”, Appl. Phys. Lett., 90, 253106.
32. C. Y. Yang, T. Y. Cho, Y. Y. Chen, C. J. Yang, C. Y. Meng, C. H. Yang, P. C. Yang, C. C. Wu and S. C. Lee , 2007, “Energy-Recycling Pixel for Active-Matrix Organic Light-Emitting Diode Display”, Appl. Phys. Lett., 90, 233512.
33. Y. T. Chang, T. H. Chuang, C. H. Yang, M. W. Tsai, and S. C. Lee , 2007, “ Transmission through Randomly Arranged Micro-cell of Sub-wavelength Holes on an Aluminum Film”, Appl. Phys. Lett., 90, 213101.
34. Y. T. Chang, T. H. Chuang, M. W. Tsai, L. C. Chen, and S. C. Lee, 2007, “ Dispersion Relation of Al/Si Surface Plasmon in Hexagonally-ordered Aluminum Hole Arrays”, J. Appl. Phys. 101 ,054305.
35. I. C. Chen, S. C. Lee , S. M. Pan and H. L. Hsieh, 2007, “GASA4, a GA-stimulated Gene, participates in Light Signaling in Arabidopsis”, Plant Science, 172, pp. 1062-1071.
36. C. Y. Huang, M. C. Wu, S. Y. Lin, J. H. Dai and S. C. Lee , 2006, “The Influence of InAs Coverage on the Performances self-assembled InGaAs Quantum Rings”, J. Crystal Growth, 301-302, pp. 841-845.
37. C. Y. Meng, B. L. Shih and S. C. Lee , 2006, “Silicon Nanowires Synthesized by Vapor-Liquid-Solid Growth on Excimer laser Annealed Thin Gold Film”, J. Nanoparticle Research, on-line, September 29, 2006 .
38. S. C. Lee, “Torsion Field and Qi”, Journal of Life Studies, First Issue, pp.15-26. June (2006). (in Chinese)
39. M. W. Tsai, T. H. Chuang, C. Y. Meng , Y. T. Chang and S. C. Lee , 2006, “ High performance midinfared narrow-band plasmonic thermal emitter”, Appl. Phys. Lett., 89, p. 173116.
40. T. H. Chuang , M. W. Tsai, Y. T. Chang, and S. C. Lee , 2006, “Remotely Coupled Surface Plasmons in a Two-Colored Plasmonic Thermal Emitter”, Appl. Phys. Lett., 89, p. 173128.
41. M. W. Tsai, T. H. Chuang , H. Y. Chang and S. C. Lee , 2006, “Dispersion of Surface Plasmon Polaritons on Silver Film with Rectangular Hole Arrays in a Square Lattice””, Appl. Phys. Lett., 89, p. 093102.
42. T. H. Chuang , M. W. Tsai, Y. T. Chang, and S. C. Lee , 2006, “ Remotely Coupled Surface Plasmons in a Metal/Insulator/Si Structure Perforated with Periodic Square Hole Arrays”, Appl. Phys. Lett., 89, p. 033120.
43. M. W. Tsai, T. H. Chuang , H. Y. Chang and S. C. Lee , 2006, “Bragg scattering of surface plasmon polaritons on extraordinary transmission through silver periodic perforated hole arrays”, Appl. Phys. Lett., 88 , p. 213112.
44. H. Y. Chang, C. Y. Meng , M. W. Tsai, B. C. Yang and S. C. Lee , 2006, “The Improvement of Polycrystalline Silicon Thin Film Transistor Fabricated by Employing Periodic Metal Pads”, IEEE Trans. Electron Devices, ED-53 , pp. 1939-1943.
45. C. Y. Meng, J. L. Chen, S. C. Lee and C. T. Chia, 2006, “The Doping Effects on Raman Spectra of Silicon Nanowires”, Phys. Rev. B 73 , p. 245309.
46. S. F. Tang, C. D. Chiang, P. K. Weng, Y. T. Gau, J. J. Luo, S. T. Yang, C. C. Shih, S. Y. Lin and S. C. Lee , 2006, “ High-Temperature Operation Normal Incident 256 × 256 InAs/GaAs Quantum Dot Infrared Photodetector Focal Plane Array”, IEEE Photonics Technology Letter, Vol. 18, No. 8, pp. 986-988.
47. H. Y. Chang, C. Y. Meng, C. W. Huang and S. C. Lee , 2005, “The low temperature a-SiN x films with high impermeability and high optical gap with application to organic light emitting diode”, J. Appl. Phys. 98, pp. 084501-1—084501-5.
48. S. D. Chen, Y. Y. Chen and S. C. Lee, 2005, “Cap Layer Induced Stress in InAs/(Al)GaAs Quantum Dots”, J. Vacuum Science and Technology, B23, pp. 2132-2136.
49. S. D. Chen, Y. Y. Chen, and S. C. Lee, 2005, “Transverse-Electric-Field-Enhanced Response in InAs/AlGaAs/GaAs Quantum-Dot Infrared Photodetectors”, Appl. Phys. Lett., 86, pp. 253104-1—253104-3.
50. S. D. Chen, Y. Y. Chen, and S. C. Lee, 2005, “High-performance Narrow-bandwidth Multi-color InAs/AlGaAs/GaAs Quantum Dot Infrared Photodetector”, Jpn. J. Appl. Phys., 44, No. 8, pp. 6307-6311.
51. C. Y. Meng, B. L. Shih and S. C. Lee, 2005, “The Influence of B 2 H 6 on the Growth of Silicon Nanowire”, J. Nanoparticle Research, 7, No. 6, pp. 615-620.
52. S. Y. Lin, J. Y. Chia, and S. C. Lee , 2005, “High responsivity quantum-dot infrared photodetector with Al 0:1 Ga 0:9 As blocking layers at both sides of the structure”, J. Crystal Growth, 278, pp. 351-354.
53. C. C. Chen, B. C. Yang and S. C. Lee, 2005, “ The Fabrication of Polysilicon Thin Film Transistors Using Nickel/Copper Double Layer Induced Lateral Crystallization”, J. Vacuum Science and Technology, B 23 , pp. 513-518.

 2005-2001

1. S. C. Lee, D. Tang and H. Kuo, 2004, “The Possible Connection between Information Field and Dark Matter and Dark Energy”, Buddhism and Science, 5, No. 2, pp. 54-65.
2. J. Hung and S. C. Lee , 2004, “ The Structural and Optical Properties of Gallium Arsenic Nanoparticles” , J. Nanoparticle Research, 6, pp. 415-419.
3. S. D. Chen, C. Y. Tsai and S. C. Lee , 2004, “ Growth of InGaAs-capped InAs Quantum Dots Characterized by Atomic Force Microscope and Scanning Electron Microscope”, J. Nanoparticle Research, 6, pp. 407-410.
4. S. Y. Lin, Y. J. Tsai and S. C. Lee , 2004, “The Effect of Silicon Dopant on The Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors”, Jpn. J Appl. Phys., 42, pp. L167-L169.
5. T. C. Lin, S. C. Lee and H. H. Cheng, 2004, “Silicon-Germanium Spherical Quantum Dot Infrared Photodetectors (QDIP) Prepared by the Combination of Bottom-up and Top-down Technologies”, J. Vacuum Science and Technology, B 22 , pp. 109-115.
6. S. D. Liu and S. C. Lee , 2004, ”Large Grain Poly-Si (~10 μm) Thin Film Transistors Prepared by Excimer Laser Annealing through a Thick SiON Absorption Layer”, IEEE Trans. Electron Devices, ED-51, pp. 166-171.
7. J. H. Lu, Y. Y. Yang, C. C. Chen, C. H. Kuan, H. T. Chen, and S. C. Lee , 2003, “Study of period number effect in the superlattice infrared photodetector”, Infrared Physics & Technology, 44 , 399–409
8. S. Y. Lin, Y. J. Tsai and S. C. Lee , 2003, “Transport Characteristics of InAs/GaAs Quantum-Dot Infrared Photodetectors”, Appl. Phys. Lett., 83 , pp. 752-754.
9. S. C. Lee , 2003, “Traveling Around the Visible and Invisible Worlds”, Buddhism and Science, 4, No. 2, pp. 84-94.
10. W. C. Hsueh and S. C. Lee , 2003, “ The Fabrication of Polysilicon Thin Film Transistors by Copper Induced Crystallization”, IEEE Trans. Electron Devices, ED-50, pp. 816-821 .
11. S. D. Liu, A. Shih, S. D. Chen and S. C. Lee , 2003, “Stability Improvement of Deuterated Amorphous Silicon Thin Film Transistors Characterized by Modified Schottky Contact Gated-Four-Probe Method”, J. Vacuum Science and Technology B, 21 , pp. 677-682.
12. S. C. Lee , 2002, “Dialogue with the Spirit”, Buddhism and Science, 3, No. 2, pp. 68-79.
13. S. C. Lee , D. Tang, C. T. Chen and S. C. Feng, 2002, “Finger Reading: Exploring the Information Field”, The International Journal of Healing and Caring, Vol. 2, No. 2.
14. S. F. Tang, S. Y. Lin and S. C. Lee , 2002, “InAs/GaAs Quantum Dot Infrared Photodetector (QDIP) with Double Al 0.3 Ga 0.7 As Blocking Barriers”, IEEE Trans. Electron Devices, ED-49 , pp. 1341-1347.
15. C. H. Chen , Y. F. Chen, A. Shih, and S. C. Lee , 2002, “Nondegrading Photoluminescence of Porous Silicon by Deterated Plasma Treatment”, Phys. Rev. B, 65 , p. 195307.
16. C. W. Lin, S. Y. Lin and S. C. Lee , 2002, “The Structural and Optical Properties of Silicon-Germanium Alloy Nanoparticles”, J. Appl. Phys., 91, pp. 2322-2325.
17. S. F. Tang, S. Y. Lin and S. C. Lee , 2002, “Integral and Fractional Charge Filling in InAs/GaAs Quantum Dot p-i-n Diode by Capacitance-Voltage Measurement”, J. Appl. Phys., 91., pp. 6700-6703.
18. C. W. Lin, S. Y. Lin and S. C. Lee , 2002, “The Structural and Optical Properties of Germanium Nanoparticles”, J. Appl. Phys., 91, pp. 1525-1528.
19. S. C. Lee and L. S. Chang, 2001, “The Connection Model between Keywords and Information Field in Finger Reading Experiments”, Buddhism and Science, 2, No. 2, pp.60-77.
20. S. Y. Lin, Y. J. Tsai, and S. C. Lee , 2001, “The Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector”, Jpn. J Appl. Phys., 40, L1290-L1292.
21. S. F. Tang, S. Y. Lin and S. C. Lee , 2001, “InAs Quantum Dots on (001) GaAs Substrate with Two Groups of Different Sizes under Arsenic Shutter Closed Condition”, J. of Nanoparticle Research, 3, pp. 489-492.
22. S. D. Liu, S. C. Lee , and M. Y. Chern, 2001 “Hydrogenated Amorphous Silicon-Germanium PIN X-ray Detector”, IEEE Trans. Electron Devices, 48, pp. 1564-1567.
23. A. Shih, S. H. Yeh, S. C. Lee and T. R. Yang, 2001, “Structural Differences between Deuterated and Hydrogenated Silicon Nitride/Oxynitride”, J. Appl. Phys., 89, pp. 5355-5361.
24. C. H. Chen, Y. F. Chen, A. Shih, S. C. Lee and H. X. Jiang, 2001, “Zone-folding Effect on Optical Phonon in GaN/Al 0.2 Ga 0.8 N Superlattices”, Appl. Phys. Lett., 78, pp. 3035-3037.
25. S. Y. Lin, Y. R. Tsai, and S. C. Lee , 2001, “High Performance InAs/GaAs Quantum Dot Infrared Photodetector with Single-Sided Al 0.3 Ga 0.7 As Blocking Layer”, Appl. Phys. Lett., 78, pp. 2784-2786.
26. S. F. Tang, S. Y. Lin and S. C. Lee , 2001, “Near Room Temperature Operation of InAs/GaAs Quantum Dot Infrared Photodetector”, Appl. Phys. Lett., 78, pp. 2428-2430.
27. D. Tang, S. C. Lee and L. C. Hsu, 2001, “Comparison between Normal Color Sense and Extrasensory Perception Color Sense in Color Adaptation Task: a Case Study”, Buddhism and Science, 2, pp. 21-28.

2000-1996

1. Y. C. Liao, S. Y. Lin and S. C. Lee , 2000, “Spherical SiGe Quantum Dots Prepared by Thermal Evaporation Method”, Appl. Phys. Lett., 77, pp. 4328-4329.
2. A. Shin, C. Y. Meng and S. C. Lee , 2000, “Mechanism for Pillar-shaped Surface Morphology of Polysilicon prepared by Excimer Laser Annealing”, J. Appl. Phys., 88, pp. 3725-3733.
3. A. Shin, J. L. Yeh and S. C. Lee , 2000, “Structural and Electronic Differences between Deuterated and Hydrogenated Amorphous Silicon”, J. Appl. Phys., 88, pp. 1684-1687.
4. S. C. Lee , C. T. Chen and D. Tang, 2000, “The Observation of Extraordinary Phenomena when Special Keywords were Tested in the Experiment on Character Recognition by Fingers”, Buddhism and Science, 1, pp. 8-17.
5. Y. P. Chou and S. C. Lee , 1999, “Evidence for the Void Size Related IR Absorption Frequency Shifts in Hydrogenated Amorphous Germanium Films”, Solid State Comm., 113, pp. 73-75.
6. S. C. Lee , C. I. Sun, J. C. Shen and Y. C. Lin, 1999, “Microsculpture by Psychokinesis”, Chinese Journal of Somatic Science, vol. 9, No. 4, pp. 153-155.
7. J. L. Yeh, H. L.Chen, A. Shih and S. C. Lee , 1999, “Formation of Si Nanocluster in Amorphous Silicon Thin Films by Excimer Laser Annealing”, Electronics Lett., 35, pp. 2058-2059.
8. A. Shih and S. C. Lee , 1999, “Hydrogenated Amorphous Silicon with Substrate Dependent Structure”, J. Non-Cryst Solids, 260, pp. 245-247.
9. J. L. Yeh and S. C. Lee , 1999, “High Field-effect Mobility Deuterated Amorphous Silicon Thin Film Transistors Based on the Substitution of Hydrogen with Deuterium”, IEEE Electron Device Lett. 20, pp. 415-417.
10. S. C. Lee , 1999, “Unification of Mind and Material – The Macroscopic Quantum Phenomena”, Chinese Journal of Somatic Science, vol. 9. No. 3, pp. 124-128.
11. S. C. Lee , C.L. Sun, J. C. Shen and J. Z. Ho, 1999, ” Revival of Peanut by Psychokinesis”, Chinese Journal of Somatic Science, vol. 9, No. 2 , pp. 52-54.
12. A. Shih, S. C. Lee and C.T. Chia, 1999, ” Evidence for Coupling of Si-Si Lattice Vibration and Si-D Wagging Vibration in Deuterated Amorphous Silicon”, Appl. Phys. Lett., 74, pp. 3347-3349.
13. J. H. Yeh and, 1999, “Amorphous-Silicon Thin Film Transistor with Liquid phase Deposition of Silicon Dioxide Gate Insulator”, IEEE Electron Device Lett., 20, pp. 138-139.
14. J. H. Wei and S. C. Lee , 1999, ” Improved Stability of Deuterated Amorphous Silicon Thin Film Transistors”, J. Appl. Phys. 85, pp. 543-550.
15. Y. T. Dai, J. L. Shen, Y. F. Chen, S. Z. Chang and S. C. Lee , 1998, ” Nonparabolicity and Effective Masses of Conduction Electron in In x Ga 1-x As Alloys”, Chinese J. of Physics, 36, pp. 20-26.
16. S. C. Lee , 1998, “The Mechanism of Character Recognition by Fingers (Third Eye) with Associated Physiological Measurements”, Chinese Journal of Somatic Science, vol. 8 , No. 3, pp. 105-113.
17. Y. P. Chou and S. C. Lee , 1998, “Structural , Optical and Electrical Properties of Hydrogenated Amorphous Silicon Germanium Alloys”, J. Appl. Phys., 83 , pp. 4111- 4123.
18. J. H. Wei and S. C. Lee , 1998, “The Retardation of Aluminum-Amorphous Silicon Interaction by Phosphine Plasma Treatment”, J. Vac. Sci. & Tech. A, 16 , pp. 587-589.
19. Y. T. Dai, J. C. Fan, Y. F. Chen, R. M. Lin, S. C. Lee , and H. H. Lin, 1997, “Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses”, J. of Appl. Phys., 82 (9), pp. 4489-4492.
20. Y. T. Dai, Y. T. Liu, R. M. Lin, M. C. H. Liao, Y. F. Chen, S. C. Lee and H. H. Lin, 1997, “Photoluminescnce and Photothermal Deflection Spectroscopy of InAs Quantum Dot Superlattices Grown on GaAs by Molecular Beam Epitaxy”, Jpn. J. Appl. Phys., 36, pp. L811-L814.
21. S. C. Lee and C. R. Shih, 1997,” Character Recognition by Fingers”, J. Chinese Medicine, vol . 8 , No. 1,pp. 1-15.
22. J. H. Wei, M. S. Sun and S. C. Lee , 1997, ” A Possible Mechanism for Improved Light- induced Degradation in Deuterated Amorphous Silicon Alloy”, Appl. Phys. Lett., 71 , pp. 1498-1500.
23. S. C. Lee and I. Bock-Mobius, 1997, “Untersuchungen des Qigong-Zustands mit Hilfe von EEG-Messungen”, ErfahrungsheilKunde, vol. 4 , pp. 229-235
24. J. H. Wei and S. C. Lee , 1997, “The Structure Change of Liquid Phasd Deposited Silicon Oxide by Water Dilution”, J. Electrochem Soc., 144 , No. 5, pp 1870-1874.
25. W. S. Liao and S. C. Lee , 1997, “Water-resistant Coating on Low Temperature Amorphous Silicon Nitride Films by a Thin Layer of Amorphous Silicon Hydrogen Alloy”, J. Electrochem Soc., 144 , No. 4, pp 1477-1481.
26. W. S. Liao and S. C. Lee , 1997, “Novel Low-Temperature Double Passivation Layer in Hydrogenated Amorphous Silicon Thin Film Transistors”, Jpn. J. Appl. Phys. 36 , pp. 2073-2076.
27. W. S. Liao and S. C. Lee , 1997, “Interfacial Interaction Between Al-1% Si and Phosphorus Doped Hydrogenated Amorphous Si Alloy at Low Temperature”, J. Appl. Phys. 81 , pp. 7793-7797.
28. B. D. Lin, R. M. Lin, S. C. Lee and T. P. Sun, 1997, “InAs Room Temperature Infrared Photoconductive Detectors Grown by Molecular Beam Epitaxy”, J. Vac. Sci. & Tech., B, 15 , pp. 321-324.
29. R. M. Lin and S. C. Lee , 1997, “Novel Method for Monitoring the Surface Roughness during Molecular Beam Epitaxy”, Jpn. J. Appl. Phys. 36 , pp. 984-986.
30. S. C. Lee , 1996, “Possible Mechanism for Solid to Generate Macroscopic Quantum Wave”, Chinese Journal of Somatic Science, vol. 6 , No. 3, pp. 111-113.
31. R. M. Lin, S. F. Tang, S. C. Lee , C. H. Kuan, G. S. Chen, T. P. Sun and J. C Wu, 1997, ” Room Temperature Unpassivated InAs p-i-n Photodectors Grown by Molecular Beam Epitaxy “, IEEE Trans. Electron Devices, ED-44 , pp. 209- 213.
32. K. C. Lin and S. C. Lee , 1996, ” Angle Position Detection Based on Amorphous Silicon Four Quadrant Orientation Detector “, Jpn. J. Appl. Phys. 35 , pp. 5618- 5624.
33. W. S. Liao and S. C. Lee , 1996, ” Water-induced Room-Temperature Oxidation of Si-H and Si-Si Bonds in Silicon Oxide “, J. Appl. Phys. 80 , pp. 1171-1176.
34. B. D. Liu, S. C. Lee and T. P. Sun, 1996, ” InSb Integrated Photo-MOSFET Fabricated by Photo-enhanced Chemical Vapor Deposition “, Optical and Quantum Electronics, 28, pp. 1277-1286.
35. J. S. Chou and S. C. Lee, 1996 , “Application of Liquid Phase Deposited Silicon Dioxide to Metal Oxide-Semiconductor Capacitor and Amorphous Silicon Thin Film Transistor”, IEEE Trans. Electron Devices, ED-43 , pp. 599-604.
36. C. L. Yeh and S. C. Lee, 1996,”Structure and Optical Properties of Amorphous Silicon Oxynitride”. J. Appl. Phys., 79 , pp. 656-663.
37. S. Z. Chang, T. C. Chang, and S. C. Lee, 1996,”A Method to Tune the Island Size and Improve the Uniformity for the in situ Formation of InGaAs Quantum Dots on GaAs”, Applied Surface Science, 92 , pp. 70-73.

 1995-1991

1. J. L. Lin and S. C. Lee , 1995, “Amorphous Silicon Thin Film Transistors”, J. Chinese Inst. Engineers, vol. 18 , No. 6, pp. 451-460.
2. K. C. Lin and S. C. Lee, 1995,”A Novel Process for Growing Gate Aluminum Oxide in Amorphous Silicon Thin Film Transistor”, J. Electrochemical Society, 142 , pp. L228-L229.
3. M. S. Chen, J. S. Chou and S. C. Lee , 1995, “Planarization of Amorphous Silicon Thin Film Transistors by Liquid Phase Deposition of Silicon Dioxide”, IEEE Trans. Electron Devices, ED-42 , pp. 1918-1923.
4. K. C. Lin and S. C. Lee , 1995, “Active Hollow Four Quadrant Orientation Detector Array for Application to Pattern Recognition”, IEEE Trans. Electron Devices, ED-42 , pp. 1233-1239.
5. J. L. Shen, Y. D. Dai, Y. F. Chen, S. Z. Chang and S. C. Lee , 1995, “Cyclotron-Resonance Studies in Relaxed In x Ga 1-x As (0 ≦ x ≦ 1) Epilayers, Phys. Rev. B, 51 , pp. 17648-17653.
6. H. D. Su, S. Z. Chang, S. C. Lee , and T. P. Sun, 1995, “High temperature InAs Infrared Detector Based on Metal-Insulator-Semiconductor structure”, Electronics Lett., 31 , pp. 918-920.
7. B. D. Liu, S. C. Lee , K. C. Liu, T. P. Sun and S. J. Yang, 1995, “Oxidation of Silicon Nitride Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature “, IEEE Trans. Electron Devices, ED-42 , pp. 795-803.
8. J. S. Chou and S. C. Lee , 1995, “Effect of Porosity on Infrared Absorption Spectra of Silicon Dioxide”, J. Appl. Phys., 77 , pp. 1805-1807.
9. Y. F. Chen, J. L. Shen, I. M. Chang, S. Z. Chang and S. C. Lee , 1995, “Photoluminescence Study of Highly Mismatched In 0.53 Ga 0.47 As Epilayers grown on InP-coated GaAs Substrates “, J. Appl. Phy., 77 , pp. 1040-1042.
10. W. S. Liao, C. H. Lin and S. C. Lee , 1994,”Oxidation of Silicon Nitride Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature”, Appl. Phys. Lett., 65 , pp. 2229-2231.
11. J. S. Chou and S. C. Lee , 1994, “The Initial Growth Mechanism of Silicon Oxide by Liquid Phase Deposition”, J. Electrochemical Society, 141 , pp. 3214-3218.
12. J. L. Shen, I. M. Chang, Y. M. Shu, Y. F. Chen, S. Z. Chang and S. C. Lee , 1994, “Raman-Line-Shape Study of In x Ga 1-x As on InP and GaAs Substrate”, Phys. Rev. B, 50 , pp. 1678-1683.
13. J. H. Wei and S. C. Lee , 1994, “The Electrical and Optical Properties of Implanted Amorphous Silicon”, J. Appl. Phys., 76 , pp. 1033-1040.
14. C. H. Lin, S. C. Lee , and Y. F. Chen, 1994, “Morphologies and Photoluminescence Mechanism of Porous Silicon under Different Etching and Oxidation Conditions”, J. Appl. Phys., 75 , pp. 7728-7736.
15. K. C. Lin, W. J. Sah and S. C. Lee , 1994, “The Hydrogenated Amorphous Silicon Active Hollow Four Quadrant Orientation Detector for Application to Neural Network Image Sensors”, IEEE Trans. Electron Devices, ED-41 , pp. 666-670.
16. J. S. Chou and S. C. Lee , 1994, “An Improved Process for Liquid Phase Deposition of Silicon Dioxide,” Appl. Phys. Lett., 64 , pp. 1971-1973.
17. S. Z. Chang, S. C. Lee , C. R. Chen and L. J. Chen, 1994, “The Dislocation Generation Mechanisms of In x Ga 1-x As (0 ≦ x ≦ 1) Epilayers Grown on (100) InP Substrates by Molecular Beam Epitaxy”, J. Appl. Phys., 75 , pp. 1511-1516.
18. S. C. Lee and C. R. Shih, 1993, “The Brain Wave Characteristics and Electromagnetic Phenomenon of Psychics”, J. Chinese Medicine, vol. 4 , No. 2, pp. 125- 136.
19. B. D. Liu, S. C. Lee , K. C. Liu, T. P. Sun and S. J. Yang, 1993, “InSb p-channel Metal-Oxide-Semiconductor Field Effect Transistor Prepared by Photoenhanced Chemical Vapor Deposition”, Appl. Phys. Lett., 63 , pp. 3622-3624.
20. T. H. Shieh and S. C. Lee , 1993, “Transport Mechanism of X Band Electrons in AlAs Electrode through GaAs/AlAs/GaAs Structure by varying GaAs Well Thickness”, Appl. Phys. Lett., 63 , pp. 3350-3352.
21. S. Z. Chang, T. C. Chang, J. L. Shen, S. C. Lee , and Y. F. Chen, 1993,”Material and Electrical Properties of Highly Mismatched In x Ga 1-x As on GaAs by Molecular Beam Epitaxy”, J. Appl. Phys., 74 , pp. 6912-6918.
22. J. S. Chou, J. H. Wei and S. C. Lee , 1993, “Enhanced Phosphorus Diffusion During the Glow Discharge Deposition of N-type Amorphous Silicon Hydrogen Alloy”, Appl. Phys. Lett., 63 , pp. 3060-3062.
23. S. Z. Chang, S. C. Lee , H. P. Shiao, W. Lin and Y. K. Tu, 1993, “Novel Binary Buffer Layer for Applications in the Heteroepitaxy of Highly Mismatched In 0.53 Ga 0.47 As Epilayers Grown on GaAs Substrates”, Appl. Phys. Lett., 63 , pp. 2417-2419.
24. T. H. Shieh, C. C. Wu and S. C. Lee , 1993, “Observation of X Band Electron Quantum Interference in Al x Ga 1-x As/AlAs/Al x Ga 1-x As/AlAs/Al x Ga 1-x As (x ≧ 0.4) Resonant Tunneling Diodes”, J. Appl. Phys., 74 , pp. 4229-4232.
25. T. H. Shieh and S. C. Lee , 1993, “Resonant Tunneling of X Band Electrons from AlAs through GaAs/AlAs/GaAs Double Barrier Structure”, Appl. Phys. Lett., 63 , pp. 1219-1221.
26. C. H. Lin, S. C. Lee , and Y. F. Chen, 1993, “Strong Room-temperature Photoluminescence of Hydrogenated Amorphous Silicon Oxide and its correlation to Porous Silicon”, Appl. Phys. Lett,. 63 , pp. 902-904.
27. T. H. Shieh and S. C. Lee , 1993, “Observation of Deep Donor Center Related Tunneling Peak in the Al x Ga 1-x As/AlAs/Al x Ga 1-x As/AlAs/Al x Ga 1-x As (0.4 ≦ x ≦ 0.5) Resonant Tunneling Diodes”, Appl. Phys. Lett., 63 , pp. 654-656.
28. S. Z. Chang, T. C. Chang and S. C. Lee , 1993, “The Growth of Highly Mismatched In x Ga 1-x As (0.28 ≦ x ≦ 1) on GaAs by Molecular Beam Epitaxy”, J. Appl. Phys., 73 , pp. 4916-4926.
29. K. C. Lin and S. C. Lee , 1992, “The Structural and Optical Properties of a-SiNx:H Prepared by Plasma Enhanced Chemical Vapor Deposition”, J. Appl Phys., 72 , pp. 5474-5482.
30. C. C. Wu and S. C. Lee , 1992, “Emitter Composition and Geometry Related Surface Recombination Current of AlGaAs/GaAs Heterojunction Bipolar Transistors”, J. Appl. Phys., 72 , pp. 5483-5488.
31. H. C. Lin, W. J. Sah and S. C. Lee , 1992, “The Vertical Integration of Crystalline NMOS and Amorphous Orientational Edge Detector”, IEEE Trans. Electron Devices, ED-39 , pp. 2810-2812.
32. H. C. Lin, W. J. Sah and S. C. Lee , 1992, “The Common Gate CMOS Inverter with Amorphous Silicon Thin Film Transistor on Top of Crystalline PMOS”, Solid State Electronics, Vol. 35 , No. 12, pp. 1709-1712.
33. B. D. Liu, T. H. Shieh, M. Y. Wu, T. C. Chang, S. C. Lee , and H. H. Lin, 1992, “Stress Induced Outdiffusion of Be in p+ GaAs Prepared by Molecular Beam Epitary”, J. Appl. Phys., 72 , pp. 2767-2772.
34. J. S. Chou, W. J. Sah, T. C. Chang, J. C. Wang and S. C. Lee , 1992, “Microcrystalline Silicon Deposited by Glow Discharge Decomposition of Heavily Diluted Silane”, Materials Chemistry and Physics, 32 , pp. 273-279.
35. C. C Wu, S. C. Lee , and H. H. Lin, 1992, “High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy”, Jpn. J. Appl. Phys., 31 , Part 2, pp., L385-L387.
36. S. C. Lee , and Y.C Chang, 1991, “The two Qigong States Characterized by ��nWave”, J. Chinese Medicine, vol. 2 , No. 1, pp. 30-46.
37. C. H. Chen and S. C. Lee , 1991, “Monolithic Integration of an AlGaAs/GaAs Surface Emitting Laser Diode and a Photodetector”, Appl. Phys. Lett., 59 , pp. 3592-3594.
38. C. H. Chien, J. J. Tsuei, S. C. Lee , Y. C. Huang and Y. H. Wei, 1991, “Effect of Emitted Bioenergy on Biochemical Function of Cells”, American J. of Chinese Medicine, vol. XIX , Nos. 3-4, pp. 285-292.
39. H. C. Lin, W. J. Sah and S. C. Lee , 1991, “The Crystalline PMOS Inverter Using Amorphous Thin Film Transistor as Active Load”, Electron Lett., 27 , pp. 2180-2181.
40. Y. F. Chen, S. C. Lee , and J. H. Chen, 1991, “Existence of a Universal Low Energy Tail in the Photoluminescence of a-SiC:H Alloys”, Solid State Comm., 79 , pp. 175-177.
41. J. H. Chen, W. J. Sah and S. C. Lee , 1991, “Identification of Infrared Absorption Peaks of Amorphous Silicon Carbon Hydrogen Alloy Prepared Using Ethylene”, J. Appl. Phys., 70 , pp. 125-130.
42. J. L. Lin, W. J. Sah and S. C. Lee , 1991, “Amorphous Silicon Thin Film Transistors with very High Field Effect Mobility”, IEEE Electron Device Lett., EDL-12 , pp. 120-121.
43. W. J. Sah, J. L. Lin and S. C. Lee , 1991, “High Performance a-Si:H Thin Film Transistor Using Lightly Doped Channel”, IEEE, Trans. Electron Devices, ED-38 , pp. 676-678.

 1990-1986

1. S. C. Lee , 1990, “The Qigong States and the Infrared Spectra of External “Qi””, Bulletin of College of Engineering, National Taiwan University, No. 49 , pp. 97-108.
2. Y. H. Jan and S. C. Lee , 1990, ” Verticle Monolithic Integration of a GaAs/AlGaAs V-Channeled Substrate Inner Stripe Laser Diode and a Heterojunction Bipolar Transistor”, Appl. Phys. Lett. 57 , pp. 2750-2752.
3. T. P. Sun, S. C. Lee , K. C. Lin, Y. M. Pang and S. J. Yang, 1990, “High Performance Metal/SiO 2 /InSb Capacitor Fabricated by Photo-Enhanced Chemical Vapor Deposition”, J. Appl. Phys., 68 , pp. 3701-3706.
4. S. J. Yih and S. C. Lee , 1990, “AlGaAs/GaAs Surface Emitting Laser Diode with Curved Reflector”, Electronics Letts., 26 , pp. 1506-1507.
5. J. A. Chen, C. K. Wang, H. H. Lin, W. S. Wang and S. C. Lee , 1990, “Single and Mulitiple ALGaAs Quantum-well Structures Grown by Liquid-phase Epitaxy”, J. Appl. Phys., 68 , pp. 2140-2145.
6. C. C. Wu, J. L. Ting, S. C. Lee and H. H. Lin, 1990, “Studies of Low Surface 2kT Recombination Current of the Emitter-Base Heterojunction of Heterojunction Bipolar Transistors”, J. Appl. Phys., 68 , pp. 1766-1771.
7. J. L. Lin, W. J. Sah and S. C. Lee , 1990, “Theoretical Analysis of Channel Doped Amorphous Silicon Field-Effect Transistors”, J. Appl. Phys., 68 , pp. 1335-1339.
8. W. J. Sah, S. C. Lee , H. K. Tsai and J. H. Chen, 1990, “Amorphous Silicon Edge Detectors for Application to Neural Network Image Sensors”, Appl. Phys. Lett., 56 , pp. 2539-2541.
9. T. P. Sun, S. C. Lee and S. J. Yang, 1990, “The Current Leakage Mechanism in InSb p + n Diodes”, J. Appl. Phys., 67 , pp. 7092-7097.
10. S. C. Lee , 1989, “The Generation of Chi by Stimulation Method”, Bulletin of College of Engineering , National Taiwan University , No. 46, pp. 117-125.
11. T. P. Sun, S. C. Lee and S. J. Yang, 1989, “The Electrical Characteristics of Metal/SiO 2 /InSb Capacitor Fabricated by Photo-Enhanced Chemical Vapor Deposition”, J. Vacuum Sci. & Tech. B , 7, pp. 1115-1121.
12. H. K. Tsai and S. C. Lee , 1989, “Origin of Boron Contamination of the Intrinsic Amorphous Silicon Hydrogen Alloys in Glow Discharge System”, J. Electrochemical Soc., 136 , pp. 3011-3016.
13. H. K. Tsai and S. C. Lee , 1989, “Theoretical Investigation of the C-V Relationship in an Amorphous Silicon p-n Junction”, Solid State Electronics, 32 , pp. 727-731.
14. J. A. Chen, J. H. Lee, S. C. Lee and H. H. Lin, 1989, “Abrupt Heterointerfaces in Al 0.35 Ga 0.65 As/ Al 0.05 Ga 0.95 As/Al 0.35 Ga 0.65 As Quantum Well Structure Grown by Liquid Phase Epitaxy”, J. Appl. Phys., 65 , pp. 4006-4009.
15. T. S. Lay, S. C. Lee and H. H. Lin, 1989, “Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Refective Diffraction Coupler”, IEEE J. Quantum Electronics, QE-25 , pp.689-695.
16. W. J. Sah, H. K. Tsai and S. C. Lee , 1989, “Physical and Electronic Structure of Amorphous Silicon Carbon Hydrogen Alloy”, Appl. Phys. Lett., 54 , pp. 617-619.
17. H. K. Liou, S. Y. Lan, C. W. Liu and S. C. Lee , 1988, “Heteroepitaxy of GaAs on Si by Metal Organic Chemical Vapor Deposition”, Bulletin of College of Engineering , National Taiwan University , No. 43, pp. 75-91.
18. L. C. Suen and S. C. Lee , 1988, “AlGaAs/GaAs Ridge Waveguide Laser Array”, J. Chinese Inst. Engineers, vol. 11 , No. 3, pp. 261-267.
19. W. J. Tzeng and S. C. Lee , 1988, “New Model for the Staebler-Wronski Effect in an Amorphous Silicon Hydrogen Alloy”, Appl. Phys. Lett., 53 , pp. 2044-2046.
20. C. Z. Chen, S. C. Lee and H. H. Lin, 1988, “The Hot Electron Effect in Double Heterojunction Bipolar Transistors: Theory and Experiment”, Solid State Electronics, 31 , pp. 1653-1656.
21. H. K. Tsai, W. L. Lin, W. J. Sah and S. C. Lee , 1988, “The Characteristics of Amorphous Silicon Carbide Hydrogen Alloy”, J. Appl. Phys., 64 , pp. 1910-1915.
22. J. G. Hwu, G. S. Lee, S. C. Lee and W. S. Wang, 1988, “Residual Charges Effect on the Annealing Behavior of Co-60 Irradiated MOS Capacitors”, IEEE Trans. Nuclear Science, 35 , pp. 960-965.
23. H. K. Tsai and S. C. Lee , 1988, “Amorphous SiC/Si Three-Color Detector”, Appl. Phys. Lett., 52 , pp. 275-277.
24. W. L. Lin, H. K. Tsai, S. C. Lee , W. J. Sah and W. J. Tzeng, 1987, “The Identification of Infrared Absorption Peaks of Amorphous Silicon Carbon Alloy by Thermal Annealing”, Appl. Phys. Lett., 51 , pp. 2112-2114.
25. C. W. Liu, S. L. Chen, J. P. Lay, S. C. Lee and H. H. Lin, 1987, “The Characteristics of Si-Doped GaAs Epilayers grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source”, Appl. Phys. Lett., 51 , pp. 1634-1636.
26. C. Z. Chen, S. C. Lee and H. H. Lin, 1987, “Design of AlGaAs Double Heterojunction Bipolar Transistors”, J. Appl. Phys., 62 , pp. 3976-3979.
27. H. K. Tsai, S. C. Lee and W. L. Lin, 1987, ” The Amorphous SiC/Si Two Color Detector”, IEEE Electron Device Lett., EDL-8 , pp. 365-367.
28. W. J. Tzeng, H. K. Tsai and S. C. Lee , 1987, “Degradation and Annealing Characteristics of Amorphous Silicon Hydrogen Alloys after long time test”, J. Appl. Phys., 62 , pp. 1856-1860.
29. S. W. Jan and S. C. Lee , 1987, “Preparation and Characterization of Indium-Tin-Oxide Deposited by Direct Thermal Evaporation of Metal Indium and Tin”, J. Electrochemical Society, 134 , pp. 2056-2061.
30. J. K. Chen and S. C. Lee , 1987, “AlGaAs/GaAs Visible Ridge Waveguide Laser with Multicavity Structure”, IEEE J. Quantum Electronics, QE-23 , pp. 1283-1286.
31. C. Z. Chen and S. C. Lee , 1987, “Effect of Base-Collector potential spike on the Common-Emitter I-V Characteristics of AlGaAs Double Heterojunction Bipolar Transistors”, IEEE Trans. Electron Devices, ED-34 , pp.1463-1469.
32. H. K. Chiou and S. C. Lee , 1986, “AlGaAs Buried Heterostructure Lasers”, Proc. of National Science Council, Part A, vol. 11 , No. 2, pp. 142-148.
33. H. H. Lin and S. C. Lee , 1986, “Determination of the AlGaAs Bandgap by Spectral Response Measurement”, J. Chinese Inst. Engineers, vol. 9 , pp. 317-322
34. S. C. Lee and T. B. Sun, 1986, “p-(Al,Ga)As/GaAs Modulation-doped Heterostructure Prepared by Liquid Phase Epitaxy”, J. Phys. Chem. of Solids, 47 , pp. 975-979.
35. S. C. Lee and H. H. Lin, 1986, “Transport Theory of the Double Heterojunction Bipolar Transistor based on Current Balancing Concept”, J. Appl. Phys., 59 , pp. 1688-1695.

 1985-1979

1. J. A. Chen, S. C. Lee and H. H. Lin, 1985, “AlGaAs/GaAs V-Groove Channeled Substrate Burried Heterostructure Laser Diodes”, J. Chinese Inst. Engineers, vol. 8 , pp. 311-316
2. M. H. Shieh, H. H. Lin, S. C. Lee and Y. L. Chiou, 1985, “AlGaAs/GaAs Oxide Stripe Double Heterostructure Lasers”, J. Chinese Inst. Engineers, vol. 8 , pp. 191-199.
3. J. A. Chen, S. C. Lee and T. I. Ho, 1985, “The Etching Characteristics of (100) GaAs by K 2 S 2 O 8 – H 2 O System”, J. Electrochemical Soc., 132 , pp. 3016-3019.
4. H. H. Lin and S. C. Lee , 1985, “Super-Gain AlGaAs/GaAs Heterojunction Bipolar Transistors using an Emitter Edge-Thinning Design”, Appl. Phys. Lett., 47 , pp. 839-841.
5. H. H. Lin and S. C. Lee , 1985, “Direct Measurement of the Potential Spike Energy in AlGaAs/GaAs Single Heterojunction Bipolar Transistors”, IEEE Electron Device Lett., EDL-6 , pp. 431-433.
6. S. C. Lee , J. N. Kau and H. H. Lin, 1985, “Current Transport across the Emitter-Base Potential Spike in AlGaAs/GaAs Heterojunction Bipolar Transistors”, J. Appl. Phys., 58 , pp. 890-895.
7. S. C. Lee , H. H. Lin and Y. L. Chiou, 1984, “0.8 and 0.85 �慆 Dual-Wavelength Photodetector with 50 nm Resolution”, Solid State Electron, 27 , pp. 917-919.
8. S. C. Lee , J. N. Kau and H. H. Lin, 1984, “Origin of High Offset Voltage in an AlGaAs/GaAs Heterojunction Bipolar Transistor”, Appl. Phys. Lett., 45 , pp. 1114-1116.
9. S. C. Lee , 1984, “Boron Contamination in the Intrinsic Layers of Amorphous Silicon Solar Cells”, J. Appl. Phys., 55 , pp. 4426-4429.
10. S. C. Lee and S. S. Chao, 1983, “Percolation Process in High Conductivity Phosphorus- Doped Amorphous Si:H:F Alloys”, J. Chinese Inst. Engineers, vol. 6 , pp. 245-249.
11. R. Tsu, J. Gonzalez-Hernando, S. S. Chao, S. C. Lee and K. Tanaka, 1982, “Critical Volume Fraction of Crystallinity in Percolation Process of Phosphorus Doped Amorphous Si:H:F Alloys”, Appl. Phys. Lett., 40 , pp. 534-535.
12. S. C. Lee and G. L. Pearson, 1981, “Current-Voltage Characteristics of Al x Ga 1-x As-GaAs Schottky Barriers and p-n Junctions”, J. Appl. Phys., 52 , pp. 5202-5206.
13. S. C. Lee and G. L. Pearson, 1981, “Rectification in Al x Ga 1-x As-GaAs N-n Heterojunction Devices”, Solid State Electronics, 24 , pp. 563-568.
14. S. C. Lee and G. L. Pearson, 1981, “Dark Current Reduction in Al x Ga 1-x As-GaAs Heterojunction Diodes”, J. Appl. Phys. 52 , pp. 275-278.
15. S. C. Lee and G. L. Pearson, 1980, “Band Readjustment” Effect with Applications to Solar Cells”, IEEE Trans. Electron Devices, ED-27 , pp.844-850.
16. C. M. Garner, C. Y. Su, Y. D. Shen, S. C. Lee , G. L. Pearson, W. E. Spicer, D. D. Edwall, D. Miller and J. S. Harris, Jr., 1979, J. Appl. Phys., 50 , pp. 3383-3388.
17. C. M. Garner, C. Y. Su, W. A. Saperstein, K. G. Jew, S. C. Lee , G. L. Pearson and W. E. Spicer, 1979, Effect of GaAs or Ga x Al 1-x As Oxide Composition on Schottky-Barrier Behavior”, J. Appl. Phys., 50 , pp. 3376-3381.

B、Conference paper (international)

2019-2016

1. T.H. Peng, and S.C. Lee, “Influence of Oxygen Molecules on Electrical Performance of Multilayer WSe2 TFT”, 3rd Electron Devices Technology and Manufacturing (EDTM) Conference, Singapore, March 13-15, 2019.
2. C. L. Chen, Y. C. Shih, T. K. Wen, S. C. Fang, D. L. Tang, S. C. Lee, and W. Y. I. Tseng, “ Short-term mindfulness-based stress reduction training increases tract integrity in right auditory radiation and anterior and posterior commissures”, Annual Meeting of the International Society for Magnetic Resonance in Medicine (ISMRM). Singapore. May 7-13, 2016.
3. Y. C. Shih, C. L. Chen, S. C. Fang, T. K. Wen, D. L. Tang, S. C. Lee, and W. Y. I. Tseng, “ Increased functional connectivity associates with the improved emotion regulation after 8-week mindfulness-based stress reduction (MBSR) training using resting-state fMRI analysis”, Annual Meeting of the International Society for Magnetic Resonance in Medicine (ISMRM), Singapore. May 7-13, 2016.
4. C. L. Chen, Y. C. Shih, T. K. Wen, S. C. Fang, D. L. Tang, S. C. Lee, and W. Y. I . Tseng, “ Increased anterior commissure integrity after MBSR training relates to improved describing ability”, Annual Meeting of the Organization for Human Brain Mapping (OHBM), Switzerland: Geneva, June 26-30, 2016.

2015-2011

1. T. H. Tzeng, C. Y. Kuo, S. Y. Wang, P. K. Huang, P. H. Kuo, Y. M. Huang, W. C. Hsieh, S. A. Yu, Y. F. Jane Tseng, W. C. Tian, S. C. Lee, and S. S. Lu, “A Portable Micro Gas Chromatography System for Volatile Compounds Detection with 15ppb of Sensitivity”, ISSCC 2015, San Francisco, U.S.A, Feb 22-26 2015.
2. H. Y. Chang; M. H. Li; T. C. Huang; C. L. Hsu; S. R. Tsai; S. C. Lee; H. C. Huang; and H. F. Juan, 2015, “Quantitative Proteomics Reveals Middle Infrared Radiation-interfered Networks in Breast Cancer Cells”, J. Proteome Research, accepted.
3. Y. J. Huang, I. C. Shih, S. C. Chao, C. Y. Wen, J. H. He and S. C. Lee, 2014, “Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiOx films and its resistive switching characteristics”, 6th IEEE International Nanoelectronics Conference (INEC), Sapporo, Japan, July 28-31 2014.
4. S. C. Yang, C. H. Cheng, C. Y. Hsueh, and S. C. Lee, 2014, “Selective Deposition of High-k Capping Layer on MoS2 Field Effect Transistors by Using Graphene Electrodes” 4th Graphene Conference, France, May 6-9 2014.
5. H. H. Chen, Y. C. Su, W. L. Huang, C. Y. Guo, Y. P. Chen, P. S. Yang, W. C. Tian, M. J. Chen and S. C. Lee, 2014, “Uncooled Narrow Bandwidth Infrared Photodetector”, 5th International Conference on Metamaterials, Photonic Crystals and Plasmonics (META), Singapore, May 20-23 2014.
6. H. H. Chen, W. L. Hunag and S. C. Lee, “Double wavelength infrared emission by plasmonic thermal emitter”, 2013 International Conference on Solid State Devices and Materials (SSDM) conference, Fukuoka, Japan, Sep. 2013.
7. P. W. Wu, C. H. Cheng, H. H. Chen, and S. C. Lee, “Enhanced Emission of Waveguide Thermal Emitter by Incorporating Random Au Nanoparticles in Periodic Hole Arrays,”2013 International Conference on Surface Plasmon Photonics (SPP6), Ottawa, Canada, May. 2013.
8. P. W. Wu, C. H. Cheng, H. H. Chen, and S. C. Lee, “Enhanced Emission of Waveguide Thermal Emitter by Incorporating Metal Nanoparticles in Periodic Hole Arrays”, 2013 International Conference on Metamaterials, Photonic Crystals and Plasmonics (META 2013), Sharjah, UAE, March. 2013.
9. M. Y. Lin, Y. J. Chen, H. Y. Lin, and S. C. Lee, “Linearly polarized light emission from organic light emitting diode with metallic nanograting structure,”2012 International Conference on Nanotechnology (IEEE Nano 2012), Birmingham, UK, August. 2012.
10. S. R. Tsai, B. C. Sheu, P. S. Huang, and S. C. Lee, “ Enhancement of Taxol Effectiveness on HeLa Cells by Narrow Bandwidth Infrared Radiation ,” 2012 International Conference on Solid State Devices and Materials (SSDM 2012) , Kyoto, Japan, Sept. 2012
11. Y. C. Chen, H. H. Chen, S. Y Huang, C. W. Yu and S. C. Lee, “Enhancing the transmission of high order plasmon modes through double-paired apertures with Au/Si structure”, META 2012, Paris, France, April 19-22, 2012.
12. C. H. Yang,  D. J. Yeh, C. I Ho, C. Y. Hsueh,  and S. C. Lee, “A Comparison for the stability of p-i-n and n-i-p amorphous solar cell fabricated by HWCVD”, 2012 MRS  Spring Meeting, San Francisco, U.S.A., April 9-14, 2012.
13. H. H. Chen, Y. T. Chang, C. W. Yu, S. Y. Huang, F. T. Chuang and S. C. Lee, “Enhanced localized surface plasmon resonance in a stacked structure”, 2011 SSDM, Nagoya, Japan, September 28 – 30 2011.
14. C. T. Huang, Y. C. Chen and S. C. Lee,  ”  Photoresponse improvement of InAs/GaAs quantum dot infrared photodetectors using GaAs 1-x Sb x  overgrown layer  “, 2011 SSDM, Nagoya, Japan, September 28-30, 2011 .
15. C. J. Huang and S. C. Lee, “Stress Effect on Self-Aligned Silicon Nanowires Junctionless Field Effect Transistors”, 2011 11 th IEEE Nanotechnology Conference, Portland, Oregon, U.S.A., August 15-18, 2011.
16. D. J. Yeh, C. I. Ho, P. C. Yang, C. H. Yang, S. C. Lee “Enhancement of heterojunction silicon solar cell efficiency by Aunanoparticles” , 2011 11 th IEEE Nanotechnology Conference, Portland, Oregon, U.S.A, August 15-18, 2011.
17. W. C. Tu, Y. T. Chang, C. H. Yang, D. J. Yeh , C. I. Ho, C. Y. Hsueh, and S. C. Lee,” Improved light scattering in amorphous silicon solar cell by double-walled carbon nanotubes”, 2011 11 th IEEE NANO, Portland, Oregon, U.S.A., August 15 – 18, 2011 .
18. S. Y. Huang, P. E. Chang, H. H. Chen, C. H. Chen, C. W. R. Yu, S. C. Lee, “Triple Peaks Plasmonic Thermal Emitter with Selectable Wavelength Using Periodic block Pattern as Top Layer”, 2011 11th IEEE Nano Conference, Portland, Oregon, U.S.A., August 15- 18, 2011.
19. H. H. Chen, Y. T. Chang, S. Y. Huang, F. T. Chuang, C. W Yu and S. C. Lee, ” Two-color polarized infrared emission in a waveguide thermal emitter “, 2011 11 th IEEE Nano Conference , Portland, U.S.A., August 15 – 18, 2011 .
20. C. W. Ronald Yu, Y. T. Chang, H. H. Chen, and S. C. Lee, “Enhancement of Localized Resonance through Non-Centrosymmetric Trumpet Hole Arrays in Ag/Si and Ag/SiO2/Ag Structure” , 2011 11 th IEEE Nano Conference, Portland, U.S.A., Aug. 15-18, 2011

2010-2006

1. W. C. Tu, Y. T. Chang, C. H. Yang, D. J. Yeh, C. I. Ho and S. C. Lee, “a-Si:H Solar Cell with Hexagonal Nano-Cylinder Array on Glass Substrate”, 2010 International Conference on Solid State Devices and Materials (SSDM 2010), p14-5, Tokyo, Japan, Sep. 22-24, 2010.
2. C. I. Ho, C. H. Yang, C. J. Huang, D. J. Yeh, Y. S. Chu, C. Y. Hsueh, W. C. Tu, T. Y. Ma, and S. C. Lee, ” Photocurrent enhancements in amorphous silicon solar cells by embedded metallic nanoparticles”, 2010 35th IEEE Photovoltaic Specialist Conference (PVSC), 343-M32, Hawaii, U.S.A., June 20 – 25, 2010.
3. H. K. Chang and S. C. Lee, “Low temperature synthesis of one-dimensional tube-like Ge nanostructures”, Nanofair 2010 – 8th International Nanotechnology Symposium, International Congress Center Dresden, Germany July 6 – 7, 2010.
4. P. E. Chang, Y. W. Jiang, Y. H. Ye, Y. T. Wu, Y. T. Chang, H. H. Chen, H. F. Huang and S. C. Lee, “ Polarization Engineering of Thermal Radiation by Utilizing Fabry-Perot Type Surface Plasmon Polariton”, 7th International Conference on Optics-photonics Design and Fabrication, Pacifico Yokohama Conference Center, Yokohama, Japan, April 19–21, 2010.
5. Y. T. Chang , S. R. Tsai, Y. T. Wu, H. H. Chen, H. F. Huang, P. E. Chang, C. W. Yu and S. C. Lee, “Emission Enhancement in Tri-Layer Ag/SiO 2 /Ag Plasmonic Thermal Emitter with Hexagonal Dimple Array”, 7th International Conference on Optics-photonics Design and Fabrication, Pacifico Yokohama Conference Center, Yokohama, Japan, April 19–21, 2010.
6. C. Y. Hsueh, C. H. Yang, and S. C. Lee, “High mobility a-Si:H TFT fabricated by Hot Wire Chemical Vapor Deposition”,2010 MRS Spring Meeting, 2010,Moscone West and San Francisco Marriott, April 5-9, 2010.
7. Y. T. Chang, H. H Chen, I. C. Tung, H.F. Huang, P.E. Chang and Si-Chen Lee, “Optical Characteristics of Al/Si structure and Ag/Al 2 O 3 /Ag Plasmonic Thermal Emitter with Square and Hexagonal Lattice”, (IEEE International NanoElectronics Conference (INEC) 2010, Hong Kong, January 3-8, 2010)
8. Y. W. Jiang, D. C. Tzuang, Y. T. Wu, M. W. Tsai, and S. C. Lee, 2009, “Enhanced Thermal Radiation Observed in Metal-dielectric-metal thermal Emitter by Surface Plasmon Resonance”, 2009 International Conference on Solid State Device and Materials (SSDM) conference, Sendai Kokusai Hotel , Seidai, Japan, October 7-9, 2009).
9. Y. W. Jiang, D. C. Tzuang, Y. T. Wu, M. W. Tsai, and S. C. Lee, 2009, “The Characteristic of Cavity Mode in Trilayer Dielectric/Metal/Dielectric Plasmonic Thermal Emitter”, 2009 International Conference on Solid State Device and Materials (SSDM) conference, Sendai Kokusai Hotel , Seidai, Japan, October 7-9, 2009).
10. H. H. Chen, Y. W. Jiang, Y.T. Wu, Y. T. Chang , P.E. Chang, H.F. Huang and Si-Chen Lee, “The Influence of the hole size on the Peak Emission Wavelength of a Plasmonic Thermal Emitter”, (2009 Int ernational Conference on Solid State Devices and Materials (SSDM) conference , Sendai Kokusai Hotel, Sendai, Japan, October 7-9, 2009).
11. J. H. Lee, Y. T. Chang, S. Y. Lin and Si-Chen Lee, “Color Selective Design for Quantum Dot Infrared Photodetectors”, ( 2009 International Conference on Solid State Devices and Materials (SSDM) conference , Sendai Kokusai Hotel, Sendai, Japan, October 7-9, 2009).
12. Y. T. Chang, H. H. Chen, J. H. Lee, Y. T. Wu, H. F. Huang and Si-Chen Lee, ” Emission Intensity and Fabry-Perot-Type Surface Plasmons in Tri-Layer Ag/SiO 2 /Ag Plasmonic Thermal Emitter with Different SiO 2 Thickness”, ( 2009 International Conference on Solid State Devices and Materials (SSDM) conference , Sendai Kokusai Hotel, Sendai, Japan, October 7-9, 2009).
13. Y. T. Wu , Lawrence D. C. Tzuang, Y. T. Chang , Y. W. Jiang, P. E. Chang, H. H. Chen, Y. H. Ye, H. F. Huang and Si-Chen Lee, ” Plasmonic Thermal Emitters with Top Metal Perforated by Hole Array Arranged in Rhombus Lattice ”, (9th Nanotechnology Conference IEEE NANO 2009 Genoa, Italy, July 26-30 2009).
14. Y. T. Wu , Y. T. Chang, Y. W. Jiang, P. E. Chang, S. R. Tsai, Lawrence D. C. Tzuang , H. H. Chen, Y. H. Ye, H. F. Huang and Si-Chen Lee, ” High Performance Mid-infrared Narrow-band Cavity Thermal Emitters ”, (9th Nanotechnology Conference IEEE NANO 2009 Genoa, Italy, July 26-30 2009).
15. Y. T. Chang, Y. T. Wu, J. H. Lee, C.M. Liang, C. J. Huang and Si-Chen Lee, ” Intensity Dependence of (1,0) and (1,1) Ag/SiO 2 Surface Plasmons in Ag/SiO 2 /Ag Plasmonic Thermal Emitter on Energy Distribution of a Graybody Emitter”, (9th Nanotechnology Conference IEEE NANO 2009 Genoa, Italy, July 26-30 2009).
16. Y. T. Chang, Y. T. Wu, S. W. Hu, H. F. Huang and Si-Chen Lee, “ Planar Tri-layer Ag/SiO 2 /Ag Plasmonic Thermal Emitter with Coherent Thermal Emission”, ( 2009, 3 rd International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, London, UK, Aug 30 th -Sept 4 th , 2009 ).
17. L. D. Tzuang, Y. T. Chang, Y. H. Ye, Y. W. Jiang, Y. T. Wu and S. C. Lee, 2008, “Polarization-Dependent Extraordinary Optical Transmission Through Ag Film Perforated with Periodical Archimedean Spiral Aperture Array” , 2nd International Congress on Advanced Electromagnetic Materials in Microwaves and Optics (METAMATERIALS 2008), Pamplona, Spain, September .
18. Y. W. Jiang, L. D. Tzuang, M. W. Tsai, Y. H. Ye, Y. T. Wu, C. Y. Chen and S. C. Lee, 2008, “ Extraordinary Transmission Through 2D Periodic Arrays of Rectangular Subwavelength Holes with Different Shape”, 2008 International Congress on Advanced Electromagnetic Materials in Microwaves and Optics Pamplona, Spain, September .
19. Y. W. Jiang, M. W. Tsai, Y. H. Ye, L. D. Tzuang, C. Y. Chen and S. C. Lee, 2008, ”Enhancement of thermal radiation in plasmonic thermal emitter by surface plasmon resonance”, The 8th International Conference on Nanotechnology, Arlington, Texas USA, August.
20. Y. T. Chang, Y. H. Ye, Y. T. Wu, J. H. Lee, D. C. Tzuang, C. F. Chan, P. C. Yang and Si-Chen Lee, 2008, “ Observation of Localized Surface Plasmon in Ag/SiO 2 /Ag Plasmonic Thermal Emitter with Annular Ag on Top Metal Film”, 2nd International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Pamplona, Spain, September 21-26, 2008.
21. Y. T. Chang, C. F. Chan, Y. T. Wu, D. C. Tzuang, S. R. Tsai, Y. H. Ye, J. W. Jiang, and Si-Chen Lee, 2008, ” Extraordinary Transmission through Aluminum Metal with Superperiodic Annular Metal Arranged in a Long-range Periodic Structure”, 8th IEEE Conference on Nanotechnology; 2008.
22. J. H. Lee, J. H. Dai, Y. T. Chang, C. F. Chan and Si-Chen Lee, 2008, “In(Ga)As quantum ring terahertz photodetector”, 2008 Solid State Devices and Materials (SSDM 2008), Ibaraki, Japan, September 23-26, 2008.
23. Y. T. Chang, Y. H. Ye, J. W. Jiang, C. F. Chan, D. C. Tzuang, Y. T. Wu, S. R. Tsai and Si-Chen Lee, 2008, “Coupling of (1,0)Ag/Air Surface Plasmons in Tri-Layer Ag/SiO 2 /Ag Plasmonic Thermal Emitter with Different SiO 2 Layer Thickness”, 2008 Solid State Devices and Materials (SSDM 2008), Ibaraki, Japan, September 23-26, 2008.
24. Y. T. Chang, C. F. Chan, D. C. Tzuang, S. R. Tsai, Y. T. Wu, Y. H. Ye, J. W. Jiang and Si-Chen Lee, 2008, ” Different Emission Spectra of Plasmonic Thermal Emitter with Hexagonal and Squared Lattice”, 6th International Conference on Optics-photonics Design and Fabrication, June 10, 2008 .
25. P. C. Yang, C. Y. Hsueh, C. H. Yang, J. H. Lee, H. W. Lin, H. Y. Chang, C. Y. Chang, and Si-Chen Lee, 2008, “Location Controlled Polycrystalline Silicon Fabricated by Employing Metal Pads and Oxynitride Absorption Layer for Thin Film Transistors”, 2008 MRS Spring Meeting, San Francisco, U.S.A., March.
26. C. H. Yang, P. C. Yang, Y. W. Jiang, C. Y. Hsueh, and S. C. Lee, 2007, “High Deposition Rate Microcrystalline Silicon Films Prepared by Conventional PECVD”, 17th International Photovoltaic Science and Engineering Conference, Fukuoka, Japan, December.
27. Y. H. Ye , M. W. Tsai , C. Y. Chen, J. W. Jiang , Y. T. Chang and S. C. Lee , 2007, “Dispersion relations of localized surface plasmon polaritons in a plasmonic thermal emitter”, 2007 Solid State Devices and Materials (SSDM 2007), Ibaraki, Japan, September.
28. C. Y. Chen , M. W. Tsai , Y. H. Ye, J. W. Jiang , Y. T. Chang and S. C. Lee , 2007, “ Coupling of surface plasmons between two silver films in a plasmonic thermal emitter”, 2007 Solid State Devices and Materials (SSDM 2007), Ibaraki, Japan, September.
29. J. H. Dai , J. H. Lee , Y. L. Lin and S. C. Lee , 2007, “In(Ga)As Quantum Rings for Terahertz Detectors ”, 2007 Solid State Devices and Materials (SSDM 2007), Ibaraki, Japan, September.
30. M. W. Tsai , J. W. Jiang , C. Y. Chen, Y. H. Ye and S. C. Lee , 2007, “Cavity mode in trilayer Ag/SiO 2 /Au plasmonic thermal emitter”, 2007 Solid State Devices and Materials (SSDM 2007), Ibaraki, Japan, September
31. Y. T. Chang, Y. H. Ye, C. Y. Chen, M. W. Tsai and S. C. Lee , 2007, “Extraordinary Transmission through Aluminum Metal with Super-periodic Micro-cell Arranged in a Long-range Periodic Structure”, IEEE-NANO 2007, Hong Kong, August.
32. M. W. Tsai, C. Y. Chen and S. C. Lee, 2007, “ Coupling between surface plasmons via thermal emission of a dielectric layer sandwiched between two metal periodic layers”, 1st European Topical Meeting on Nanophotonics and Metamaterials, Seefeld, Austria, January.
33. Y . T . Chang, C. Y. Chen , I. C. Tung, M. W . Tsai, and S . C . Lee , 2007, “Surface plasmon on the extraordinary transmission through Ag/Si structure with perforated 3×3 hole array arranged in a long range periodic structure”, 1st European Topical Meeting on Nanophotonics and Metamaterials, Seefeld, Austria, January.
34. Y. H. Peng, H.R. Li, P. S. Chen, Y. W. Suen, C. H. Kuan and S. C. Lee, 2006, “Characteristics of Superlattice LED with a Si0.8Ge0.2 or Si Capped Layer at Room Temperature”, he 3rd International Silicon Germanium Technology and Device Meeting, May, Princeton, New Jersey, USA.
35. M. W. Tsai, T. H. Chuang, C. Y. Meng, Y. T. Chang, S. C. Lee, Y. T. Tsai, Y. H. Fu and D. P. Tsai, 2006, “Study of mid-infrared narrow-band plasmonic thermal emitter”, 9th International conference on near-field optics, nanophotonics and related techniques, 2006, Lausanne, Switzerland.
36. P. C. Yang, C. Y. Meng, M. W. Tsai and S. C. Lee, 2006, ” Poly-Si Thin Fim Transistor with Multiple Nanowire Channels Prepared by Excimer Laser Annealing”, ECS- TFTT VIII symposium 2006, Cancun, Mexico, October.
37. J. H. Dai, Y. L. Lin, and S. C. Lee, 2006, “Opto-electronic Properties of InGaAs Quantum Ring Infrared Photodetectors”, IEEE-NANO 2006, Cincinnati, USA, August.
38. Y. T. Chang, T. H. Chuang, M. W. Tsai, C. Y. Yang and S. C. Lee, 2006, “Extraordinary transmission through Al metal with periodic micro-cell holes arranged in the random structure”, IEEE-NANO 2006, Cincinnati, USA, August.
39. T. H. Chuang , M. W. Tsai, Y. T. Chang, and S. C. Lee, 2006, “ Coupling Length of Metal/Si Surface Plasmons in a Metal/Insulator/Si Structure Perforated with Periodic Square Hole Arrays”, IEEE-NANO 2006, Cincinnati , USA, August.
40. M. W. Tsai, T. H. Chuang, Y. T. Chang and S. C. Lee, 2006, “ Two Color Squared-lattice Plasmonic Thermal Emitter”, IEEE-NANO 2006, Cincinnati, USA, August.
41. M. W. Tsai, T. H. Chuang and S. C. Lee, 2006, “ Influence of hole size on extraordinary transmission through periodic perforated hole arrays”, Nanotech 2006, Boston, US, May.
42. C. H. Liou, C. W. Hsieh, C. H. Hsieh, C. H. Wang, S. C. Lee, J. H. Chen, 2006, “ Studies of Chinese Original Quiet Sitting by Using Functional Magnetic Resonance Imaging : Exploring the Brain Activation Area of “ Allow its Natural Workings ” Stage ”, 12 th Annual Meeting of the Organization for Human Brain mapping, June.

2005-2001

1. C. H. Liu, C. W. Hsieh, C. H. Hsieh, C. H. Wang, S. C. Lee , Jyh-Horng Chen, 2005, “ Studies of Chinese Original Quiet Sitting by Using Functional Magnetic Resonance Imaging : Exploring the Brain Activation Area of “ Invitation of Primordial Qi ” Stage ”, 11 th Annual Meeting of the Organization for Human Brain mapping, 2005 . 06.12-16.
2. C. H. Liu, C. W. Hsieh, C. H. Hsieh, C. H. Wang, S. C. Lee , J. H. Chen, 2005, “Comparison of fMRI BOLD Effect and Arterial Pulsation Harmonic Distribution among Different Breathing Rate”, 27 th Annual International Conference of IEEE Engineering in Medicine and Biology Society (EMBS), September 1-4, Shanghai, China.
3. C. H. Liu, C. W. Hsieh, C. H. Hsieh, C. H. Wang, S. C. Lee , Jyh-Horng Chen, 2005, “Studies of Chinese Original Quiet Sitting By Using Functional Magnetic Resonance Imaging”, 27 th Annual International Conference of IEEE Engineering in Medicine and Biology Society (EMBS), September 1-4, Shanghai, China.
4. C. Y. Meng, J. L. Chen and, and S. C. Lee , 2005, “ The Growth and Raman Spectra of boron-doped Silicon Nanowires ”, IEEE-NANO 2005, Tokyo, Japan, August.
5. J. H. Dai, Y. L.Lin, and S. C. Lee , 2005, “Optical properties of self-assembled InGaAs quantum wire grown on (100) GaAs substrate”, IEEE-NANO 2005, Tokyo, Japan, August.
6. S. D. Chen, Y. Y. Chen and S. C. Lee , 2005, “Switching Between Transverse Electric and Magnetic Mode in InAs/AlGaAs/GaAs Quantum Dot Infrared Photodetector”, IEEE-NANO 2005, Tokyo, Japan, August.
7. C. H. Liou, C. H. Hsieh, S. C. Lee , S. C. Fang, C. W. Hsieh, J. H. Chen, 2004, “Studies of Forced and Non-forced Chinese Meditation by Using Functional Magnetic Resonance Imaging”, 10 th Annual Meeting of the Organization for Human Brain mapping, June.
8. B. L. Shih, C. Y. Meng and S. C. Lee, 2004, “ The Growth and Characteristics of Un-doped and P-doped Silicon Nanowire”, Proc. of 2004 IEDMS, Hsin-Chu , Taiwan .
9. K. H. Lee and S. C. Lee, 2004, “ Fabrication of Poly-Si Thin Film Transistor by Excimer Laser Annealing with a SiON Absorption Layer”, Proc. of 2004 IEDMS, Hsin-Chu , Taiwan .
10. Y. Y. Chen, S. D. Chen, and S. C. Lee, 2004, “ The Multi-color InAs/AlGaAs/GaAs Quantum Dot Infrared Photodetector”, Proc. of 2004 IEDMS, Hsin-Chu , Taiwan .
11. S. D. Chen, Y. Y. Chen and S. C. Lee, 2004, “ High-performance Multi-color InAs/AlGaAs Quantum Dot Infrared Photodetector”, 2004 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan.
12. S. Y. Lin, J. Y. Chi and S. C. Lee , 2004, “ High Responsivity Quantum-Dot Infrared Photodetector with Two Al 0.1 Ga 0.9 As Blocking Layers at Both Sides of The Structure”, International Conference on Molecular Beam Epitaxy (MBE2004), Edinburgh, Great Britain.
13. C. H. Liou, C. H. Hsieh , S. C. Lee , S. C. Fang , C. W. Hsieh, J. H. Chen, 2004, “ Studies of Forced and Non-forced Chinese Meditation by Using Functional Magnetic Resonance Imaging”, Tenth Annual Meeting of the Organization for Human Brain Mapping 2004, Budapes, Hungary.
14. S. C. Lee , 2003, “High Temperature Operation (~ 240 K) of InAs/GaAs and Silicon-Germanium Spherical Quantum Dot Infrared Photodetector (QDIP)”, 3 rd Emerging Information Technologies Conference, Princeton, New Jersey, USA, October. (Invited Planar Talk)
15. T. C. Lin, S. C. Lee , Hung-Hsiang Cheng and Sheng-Wei Lee, 2003, “High Temperature Operation (~ 240 K) of Silicon-Germanium Spherical Quantum Dot Infrared Photodetector (QDIP) by Combination of Bottom-up and Top-down Technologies”, International Workshop on Processing and Characterization of Nanomaterials, Warsaw, Poland
16. Y. J. Shiah, S. C. Lee & Robert Morris, 2003, “Evaluation Cutaneous Acuity Training Techniques”, 27th International Society for Psychical Conference, Manchester, UK.
17. C. W. Wu, K. H. Chuang, S. C. Lee , Ching-Po Lin, Jyh-Horng Chen, 2003, “ Finger Reading by Using Functional Magnetic Resonance Imaging”, Ninth Annual Meeting of the Organization for Human Brain Mapping 2003, New York, USA, June.
18. C. C. Chen and S. C. Lee , 2003, “ An Order of Magnitude Increase of Lateral Growth Rate of Poly-Si Induced by Cu/Ni Instead of Ni Alone”, 2003 VLSI-TSA Symposium, Hsinchu, Taiwan.
19. T. C. Lin, S. C. Lee , H. H. Cheng and S. W. Lee, 2002, “High Temperature Operation (~ 240 K) of Silicon-Germanium Spherical Quantum Dot Infrared Photodetectors (QDIP) Prepared by Combination of Bottom-up and Top-down Technologies”, Proc. of 2002 IEDMS, Taipei, Taiwan, pp. 247-252.
20. W. C. Hsueh and S. C. Lee , 2002, “The Fabrication of Polysilicon Thin Film Transistors by Copper Induced Crystallizatioin”, Proc. of 2002 IEDMS, Taipei , Taiwan , pp. 155-157.
21. Shen-De Chen, Chiou-Yun Tsai, and Si-Chen Lee , 2002, “ Phase Separation Growth of InGaAs Cap Layer on InAs/GaAs Quantum Dots”, IEEE-NANO 2002, Washington D.C., August.
22. S. C. Lee , D. Tang, C. D. Chen and S. T. Fang, 2001, “Finger Reading : Phenomena and Implication”, Conference on Spiritual Healing Ⅲ : Bridging Worlds and Filling Gaps, Kona , Hawaii , U.S.A, November.
23. S. F. Tang, S. Y. Lin, and S. C. Lee , 2001, “Temperature-Stable (Wavelength~ 1 μ m) InAs/GaAs Quantum Dot Light-Emitting Diode”, IEEE-NANO 2001 (First IEEE Conference on Nanotechndogy), Maui , Hawaii , U.S.A, Octbor.
24. S. Y. Lin, Y. J. Tsai and S. C. Lee , 2001, “100K Operated Photovoltaic InAs/GaAs Quantum-Dot Infrared Photodetector with Uniform Dot Density”, 2001 International Conference on Solid State Devices and Materials (SSDM), Tokyo , Japan .
25. S. C. Lee , 2001, “High Temperature Operated Photovoltaic-photoconductive (PV-PC) Mixed-mode InAs/GaAs Quantum Dot Infrared Photodetector”, Japan-Taiwan Joint Seminar on Photonics, Chiba , Japan , February.

2000-1996

1. S. Y. Lin, Y. R. Tasi, S. C. Lee , 2000, “Negative Differential Conductance of InAs/GaAs Quantum Dot Infrared Photodetector”, International Photonics Conf. (ICP 2000), Hsinchu , Taiwan .
2. C. Y. Meng, A. Shih, S. C. Lee , and C. T. Chia, 2000, “Nickel Enhanced Polysilicon Formation by Excimer Laser Annealing”, 2000 IEDMS, Tainan , Taiwan .
3. S. D. Chen, A. Shih, and S. C. Lee , 2000, “The Fabrication and Instability Analysis of Schottky-Contact Gated Four Probe a-Si:H(D) Thin Film Transistros, 2000 IEDM, Tainan , Taiwan .
4. S. Y. Lin, Y. R. Tsai, S. F. Tang and S. C. Lee , 2000, “High Performance InAs/GaAs Quantum Dot Infrared Photodetector (QDIP) Operated over 60 K”, 2000 International Electronic Devices and Materials Symposium (IEDM), Tainan , Taiwan .
5. S. F. Tang, S. Y. Lin, S. C. Lee , J. S. Kuang and Y. T. Cherng, 2000, “High Temperature Operated (~250 K) Photovoltaic-photoconductive (PV-PC) Mixed-mode InAs/GaAs Quantum Dot Infrared Photodetector”, International Electron Device Meeting (iedm), San Francisco, U.S.A.
6. A. Shih, S. C. Lee , T. R. Yang and C. C. Lu, 2000, “Structural Differences between Deuterated and Hydrogenated Silicon Nitride/Oxynitride”, 198th Meeting of the Electrochemical Society, Phoenix , U.S.A.
7. Y. C. Liao, S. Y. Lin, S. C. Lee , and C. Chia, 2000, “Spherical SiGe Quantum Dots prepared by Thermal Evaporation Method”, 2000 International Conf. Solid State Devices and Material, (SSDM 2000), Sendai, Japan, pp. 336~337.
8. S. F. Tang, S. Y. Lin, Y. C. Liao, S. C. Lee and Y. T. Cherng, 2000, “Observation of Self-Assembled InAs/GaAs Quantum Dot Structure with Temperature-Dependent Photoluminescence Measurement and Electrical Characteristics”, International Optoelectronics Symposium Photonics Taiwan, Taipei, Taiwan.
9. R. M. Lin and S. C. Lee , 1999, “Up to 5ML Self-Organized InAs Quantum Dots Grown on GaAs”, Canadian Semiconductor Technology Conference, Ottawa , Canada , August 10~13.
10. Chun-Ting Liu and S. C. Lee , 1998, ” Photo-CVD SiO 2 Passivated InAs P-I-N Infrard Photodiodes”, 1998 International EDMS, Tainan Taiwan .
11. J. l. Yeh and S. C. Lee , 1998, ” High Field-effect-mobility a-Si:D TFT based on the Substitution of Hydrogen with Deuterium”, 1998 International EDMS, Tainan Taiwan .
12. S. C. Lee , 1998, “The Improved Performance and Stability of Deuterated Amorphous Silicon Thin Film Transistor”, Workshop on “Role of Hydrogen and Deuterium in Hot Electron Semiconductor Device Degradation”, Urbana-Champaign , Illinois . (Invited Talk)
13. S. C. Lee , 1997, ” The Mechanism of Chatacter Recognition by Fingers (Third Eye) with Associated Physiological Measurements”, The Fourth Scientific Meeting of Somatic Science in China , Beijing , China .
14. J. H. Wei, M. S. Sun and S. C. Lee , 1997, ” The Improved Light-Induced Degradation and the Possible Mechanism in Deuterated Amorphous Silicon Alloy”, 1997 International Conf. on Solid State Devices and Materials (ssdm), Hamamatsu , Japan .
15. R. M. Lin, S. C. Lee and H. H. Lin, 1997, “Photoluminescence of InAs Quantum Dot Superlattice grown on GaAs by MBE”, Materials Research Society, 1997 Spring meeting, San Francisco , California .
16. J. H. Wei and S. C. Lee , 1996, “The Mechanism of Initial Silicon Oxide Growth by Liquid Phase Deposition”, 1996 International EDMS, Hsinchu , Taiwan .
17. B. D. Liu, R. M. Lin S. C. Lee and Tai-Ping Sun, 1996, “Highly Mismatch InAs/GaAs Infrared Photoconductive Detectors Grown by Molecular Beam Epitaxy”, 1996 International EDMS, Hsinchu , Taiwan .
18. R. M. Lin and S. C. Lee , 1996, “Novel Method to Determine the InAs growth mode by Molecular Beam Epitaxy”, 1996 International EDMS, Hsinchu , Taiwan .
19. S. F. Tang, R. M. Lin, S. C. Lee , C. H. Kuan, Gin-Shiang Chen, Tai-Ping Sun and Jyh-Chiarng Wu, 1996, “Improvement of Current Leakage on InAs Diode Detector by Adding an Undoped Layer”, 1996 International EDMS, Hsinchu, Taiwan.
20. J. H. Wei and S. C. Lee , 1996, ” The Delay Time and Structure Change of Liquid Phase Deposited Silicon Oxide “, The Electrochemical Society 190th Meeting, San Antonio, Texas, p. 555, 1996.
21. W. S. Liao and S. C. Lee, 1996, ” Protection of Low Temperature PECVD a-SiNx:H Films by Coating a Thin Layer of a-Si : H “, Eighth International Conf. on Solid Films and Surfaces ( ICSFS-8 ), Osaka , Japan .
22. S. C. Lee and C. R. Shih, 1996, ” Investigation of Character Recognition on Folded Papers Using Fingertips”, The 4th International Symp.-Biomedical Eng. in the 21st Century, Taipei, Taiwan, p. 194.

1995-1991

1. R. M. Lin and S. C. Lee , 1995, “Novel “insitu” Method to Determine the InAs Epilayer Quality and InAs Infrared Light Emitting Diode (LED) by MBE”, 20th Annual Conf. on Infrared and Millimeter Waves, Orlando, Flourida, U.S.A.
2. K. C. Lin and S. C. Lee , 1995, “Angle Position Detection Using a Novel Double Hollow Four Quandrant Orientation Detector for Application to Pattern Recognition”, 1995 International Conf. on Solid State Device and Materials (SSDM’95), Osaka, Japan. Extended Abstract, pp. 638-640.
3. K. C. Lin and S. C. Lee , 1995, “A Novel Angle Position Detector for Application to Pattern Recognition”, 53rd Annual Device Research Conference, Charlottesville , Virginia , U.S.A. Digest, pp. 68-69.
4. M. S. Chen, J. S. Chou and S. C. Lee , 1994, “Gate Planarization of Amorphous Silicon Thin Film Transistor with Liquid Phase Deposition Process” Second Symp. on Thin Film Transistor Technologies, Miami Beach , Florida , The Electrochemical Soc. Proc. Vol. 94-35, pp. 135-144.
5. S. Z. Chang, T. C. Chang and S. C. Lee , 1994, “A New Method to Tune the Island Size and Improve the Uniformity for the In-Situ Formation of InGaAs Quantum Dots on GaAs”, 7th International Conf. on Solid Films and Surfaces, Hsinchu , Taiwan .
6. K. C. Lin and S. C. Lee , 1994, “Active Hollow Four Quadrant Orientation Detector Array for Application to Pattern Recognition”, 1994 International Conf. on Solid State Device and Materials (SSDM ’94), Yokohama , Japan .
7. J. S. Chou and S. C. Lee , 1994, “A New Process for Liquid Phase Deposition of Silicon Oxide and Its Application in Amorphous Silicon Thin Film Transistor”, 1994 International EDMS, Hsinchu , Taiwan .
8. J. H. Wei and S. C. Lee , 1994, “The Electrical and Optical Properites of Phosphorus Implanted Amorphous Silicon Hydrogen Alloy”, 1994 International EDMS, Hsinchu , Taiwan .
9. C. H. Lin, S. C. Lee , Y. F. Chen, 1994, “Photoluminescence Mechanisms in Porous Silicon”, 1994 International EDMS, Hsinchu , Taiwan .
10. K. C. Lin, S. C. Lee , 1994, “Active Hollow Four Quadrant Orientation Detector Array for Application to Pattern Recognition”, 1994 International EDMS, Hsinchu , Taiwan .
11. B. D. Liu, S. C. Lee , K. C. Liu, T. P. Sun, S. J. Yang, 1994, “InSb Photo-MOSFET Fabricated by Photo-Enhanced Chemical Vapor Deposition”, 1994 International EDMS, Hsinchu, Taiwan.
12. T. H. Shieh, S. C. Lee , 1994, “Identification of Tunneling Peaks in the GaAs/AlAs/GaAs Resonant Tunneling Diode by Magnetic Field”, 1994 International EDMS, Hsinchu, Taiwan.
13. W. S. Lu, J. G. Hwu, J. S. Chou, S. C. Lee , 1994, “Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment”, 1994 International EDMS, Hsinchu, Taiwan.
14. B. D. Liu, S. C. Lee , K. C. Liu, T. P. Sun and S. J. Yang, 1994, “High Breakdown Voltage InSb p-channel MOSFET prepared by Photo-Enhanced Chemical Vapor Deposition”, International Symp. on SPIE’s International Symposium on OE/Aerospace sensing, Orlando , Florida , U.S.A.
15. J. L. Shen, S. Z. Chang S. C. Lee , and Y. F. Chen, 1994, “Study of Asymmetric Broadening of Raman Scattering in In x Ga 1-x Ga 1-x As/InP and In x Ga 1-x As/GaAs Epilayers”, Sixth International Conference on Indium Phosphide and Related Materials, Santa Barbara, California, U.S.A.
16. S. Z. Chang and S. C. Lee ,1994, “The Dislocation Generation Mechanism of In x Ga 1-x As Epilayers (0.32 ≦ x ≦ 1) Grown on InP Substrates by Molecular-Beam Epitaxy”, Sixth International Conference on Indium Phosphide and Related Materials, Santa Barbara, California, U.S.A.
17. T. H. Shieh and S. C. Lee , 1993, “Transport Mechanism of X Band Electrons in AlAs Electrode Through GaAs/AlAs/GaAs Structure”, Proc. 1993 International Semiconductor Device Research Symposium, Charlottesville , Virginia , U.S.A. , pp.881-884.
18. T. H. Shieh and S. C. Lee , 1993, “Observation of Deep Donor Center Related Tunneling Peak in the Al x Ga 1-x As/AlAs/Al x Ga 1-x As/AlAs/Al x Ga 1-x As (0.4 ≦ x ≦ 0.5) Resonant Tunneling Diodes”, 1993 International Conf. Solid State Device and Materials (SSDM ’93), Chiba , Japan , Extended Abstract, pp.333-335.
19. S. Z. Chang, S. C. Lee , H. P. Shiao, W. Lin and Y. K. Tu, 1993, “A New Binary Buffer Layer Concept for applications in the Heteroepitaxy of Highly Mismatched In 0.53 Ga 0.47 As on GaAs”, 1993 International Conf. Solid State Device and Materials (SSDM ’93), Chiba, Japan, Extended Abstract, pp.736-738.
20. S. Z. Chang, T. C. Chang and S. C. Lee , 1992, “Growth Mode at the Inital Stage of In x Ga 1-x As (0.28 ≦ x ≦ 1) on (100) GaAs by Molecular Beam Epitaxy”, International Symp. on Optoelectronics in Computers, Communications and Control (OCCC ’92), Hsinchu, Taiwan.
21. T. H. Shieh, C. C. Wu and S. C. Lee , 1992, “�� and X Bands Cossover Effect on the Al x Ga 1-x As/AlAs/Al x Ga 1-x As/AlAs/Al x Ga 1-x As (0.39 ≦ x ≦ 0.45) Resonant Tunneling Diodes”, 1992 International EDMS, Taipei, Taiwan.
22. S. Z. Chang, T. C. Chang and S. C. Lee , 1992, “Redefinition of Critical Thickness in Highly Mismatched In x Ga 1-x As/Gats Quantum Wells grown by MBE”, 1992, International EDMS, Taipei, Taiwan.
23. S. C. Lee , 1992, “Amorphous Thin Film Transistor”, 1992 International Electron Devices and Materials Symposium (EDMS), Taipei , Taiwan . (Invited Talk)
24. S. C. Lee and W. J. Sah, 1992, “Amorphous Silicon Four Quadrant Orientation Detector Array for Application in Pattern Recognition”, Third International Conf. on Solid State and Integrated Circuit Technology, Beijing, China. (Invited Talk)
25. C. C. Wu, S. S. Lu, S. C. Lee , F. Williamson and M. I. Nathan, 1992, “High Perform ance In 0.49 Ga 0.51 P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy”, International Conf. on Solid State Devices and Materials (SSDM), Tsukuba Science City, Japan.
26. S. C. Lee and W. J. Sah, 1992, “Applications of a-Si:H to Neural Network Image Sensor”, 6th International Conf. on Solid Films and Surfaces, Paris , France . (Invited Talk)
27. J. L. Lin and S. C. Lee , 1991, “The Amorphous Silicon Thin Film Transistors With High Field Effect Mobility “, Proc. 1991 International Semiconductor Device Research Symposium, Charlottesville , Virginia , U.S.A. , pp. 517-520. (Invited Talk)
28. S. C. Lee , 1991, “The Two Qigoing States Characterized by Brain Wave”, International Congress on Traditional Medicine, Beijing , China .
29. P. D. Liu, T. H. Shieh, M. Y. Wu, T. C. Chang, S. C. Lee , and H. H. Lin, 1991, “Heavily Doping of GaAs with Be for Application to p + -type AlGaAs/GaAs Heterojunction Infrared Detector”, International Conf. on Solid State Devices and Materials (SSDM), Yokohama, Japan.

1990-1979

1. W. J. Sah and S. C. Lee , 1990, “Amorphous Silicon Four-Quadrant Orientation Detector (FOQUOD) for Application to Neural Network Image Sensors”, 1990 IEEE International Electron Device Meeting (iedm), San Fracisco, California, U.S.A., Technical Digest, pp. 291-294.
2. J. L. Lin, W. J. Sah, and S. C. Lee , 1990, “Amorphous Silicon Thin Film Transistors with 5.1 cm 2 /V-sec Field Effect Mobility”, International Electronic Devices and Material Symposium, Hsinchu, Taiwan, pp. 432-434.
3. P. D. Liu, S. C. Lee , C. Y. Chen and B. J. Lee, 1990, “Identification of Electron to Heavy Hole Band-to-Band Transition in the Photoluminescence Spectra of AlGaAs/GaAs Quantum Well”, International Electronic Devices and Material Symposium, Hsinchu, Taiwan, pp. 64-67.
4. C. C. Wu, S. C. Lee , and H. H. Lin, 1990, “The Transport Mechanism for Base Current in
5. an AlGaAs/GaAs Heterojunction Bipolar Transistor”, International Electronic Devices and Material Symposium, Hsinchu, Taiwan, pp. 192-194.
6. W. J. Sah, and S. C. Lee , 1990, “Amorphous Silicon Edge and Orientation Detectors”, International Electronic Devices and Material Symposium, Hsinchu , Taiwan , pp. 512- 515.
7. S. J. Yih, and S. C. Lee , 1990, “An AlGaAs/GaAs Surface Emitting Laser Diode with Curved Reflector”, International Electronic Devices and Material Symposium, Hsinchu , Taiwan , pp. 101-104.
8. Y. H. Jan and S. C. Lee , 1990, “A Vertical Monolithic Integration of a GaAs/AlGaAs V- Channeled Substrate Inner Stripe Laser Diode and a Heterojunction Bipolar Transistor”, International Electronic Devices and Material Symposium, Hsinchu, Taiwan, pp. 199- 202.
9. T. P. Sun, S. C. Lee and S. J. Yang, 1990, “Low Leakage Current and High Breakdown Voltage P + n Diode”, SPIE’s Symposium on Infrared Applied Science and Engineering, Orlando , Florida .
10. W. J. Sah, S. C. Lee and J. H. Chen, 1989, “Amorphous Silicon Edge Detector for Application to Electronic Eyes”, IEEE International Electron Device Meeting (iedm), Washington , U. S. A.
11. T. P. Sun, S. C. Lee and S. J. Yang, “The Origin of Instability in Metal/SiO 2 /InSb MOS Capacitor Fabricated by Photo-Enhanced Chemical Vapor Deposition”, SPIE’s Symposium on Infrared Applied Science and Engineering, Orlando, Florida, U.S.A., June 1989.
12. W. J. Sah and S. C. Lee , “Doping Induced Structural Change in Amorphous Silicon (Carbon) Hydrogen Alloy”, Second International Conference on Amorphous and Crystalline Silicon Carbide and Related Materials, Santa Clara, California, U.S.A. May 1988.
13. J. A. Chen, S. C. Lee and H. H. Lin, “Al 0.35 Ga 0.65 As/Al 0.05 Ga 0.95 As Quantum Well Structure
14. grown by Liquid hase Epitaxy”, International Electronic Devices and Materials Symposium, Kaohsiung , Taiwan , R.O.C., June 1988. (Proc., pp.92- 96)
15. W. J. Tzeng and S. C. Lee , “The Initiation of Photodegradation in a-Si:H p-i-n Solar Cells”, International Electronic Devices and Materials Symposium, Kaohsiung , Taiwan , R.O.C., June 1988. (Proc., 385-389)
16. S. C. Lee and S. Jan, “The Theory of Deep Donor State in Al x Ga 1-x As”, International Conf. on Solid State Devices and Materials, Tokyo, Japan, December 1988. (Proc., pp.251-254)
17. W. J. Sah, H. K. Tsai and S. C. Lee , ‘Identification of Physical and Electronic Structure of Amorphous Silicon (Carbon) Hydrogen Alloy by Thermal Annealing”, International Conf. on Solid State Devices and Materials (SSDM), Tokyo, Japan, December 1988. (Proc., pp.243-246)
18. H. K. Tsai and S. C. Lee , 1987, “The a-SiC:H/a-Si:H Two and Three-Color Detectors with High Rejection Ratio”, International IEEE Electron Device Meeting (iedm), Washington, D.C., U.S.A..
19. C. Z. Chen, S. C. Lee and H. H. Lin, 1987, “Engineering on npn Double- Heterojunction Bipolar Transistors”, SPIE’s Advances in Semiconductors and Semiconductor Structure, Bay Point, Florida.
20. W. J. Tzeng, H. K. Tsai and S. C. Lee , 1987, “Long-time Repeated Photodegradation Test of Amorphous Silicon Hydrogen Alloys”, International Conf. on Stability of Amorphous Silicon Alloy Materials and Devices, Palo Alto, California.
21. S. C. Lee , H. K. Liou, S. Y. Lang and C. W. Liu, 1986, “Heteroepitaxy of GaAs on Si by Metal-Organic Chemical Vapor Deposition (MOCVD)”, International Conference on State-of-the-Art Program on Compound Semiconductor (SOTAPOCS V), San Diego, California.
22. S. C. Lee , C. Z. Chen and H. H. Lin, 1986, “New Transport Theory of the Homo and Heterojunction Bipolar Transistors and Its Applications”, International Symposium on Compound Semiconductor Science and Technology, Hsinchu, Taiwan.
23. S. C. Lee , H. C. Lee, M. F. Dai, F. C. Hwang and C. Y. Nee, 1986, “Photoluminescence of Sn-doped Al x Ga 1-x As grown by Liquid Phase Epitaxy”, International Symposium on Compound Semiconductor Science and Technology, Hsinchu, Taiwan.
24. H. M. Sheu, S. C. Lee and S. Y. Lan, 1984, “Characterization of Al x Ga 1-x As Epilayers”, International Conf. on Electron Devices and Materials, Hsinchu , Taiwan , p.417.
25. H. H. Lin and S. C. Lee , 1984, “Dual Wavelength Photodetector and Its Application on Wavelength Division Multiplexing Technology”, International Conf. on Electron Devices and Materials, Hsinchu , Taiwan , p.393.
26. J. N. Kau and S. C. Lee , 1984, “Observation of Interfacial Potential Spike Height in AlGaAs/GaAs Heterojunction Bipolar Transistor”, International Conf. on Electron Devices and Materials, Hsinchu , Taiwan , p.321.
27. S. C. Lee , 1984, “Photodetectors for Wavelength Division Multiplexing Technology”, Technical Digest of R.O.C.-Japan Workshop on Optoelectronics, Tokyo , Japan , p. 65.
28. S. C. Lee and G. L. Pearson, 1980, “Dark Current Reduction in AlGaAs-GaAs Heterojunc tion Diodes”, IEEE Device Research Conf., Ithaca , New York .
29. S. C. Lee and G. L. Pearson, 1979, “Band-Readjustment Effect Between Two Closely Spaced Junctions”, IEEE Device Research Conf., Boulder, Colorado.

C、Conference paper (local)

2011-2000

1. H. K. Chang and S. C. Lee, “Fabrication of Morphology-Tunable SiGe Nanostructures Grown on Glass Substrate “, 4 th 2011 IEEE International NanoElectronics Conference (IEEE INEC 2011) ,, Taoyuan, Taiwan, June 21-24, 2011
2. Y. T. Chang, C. F. Chan, D. C. Tzuang, S. R. Tsai, Y. T. Wu, Y. H. Ye, J. W. Jiang and Si-Chen Lee,” Different Emission Spectra of Plasmonic Thermal Emitter with Hexagonal and Squared Lattice”, (6th International Conference on Optics-photonics Design and Fabrication, Taipei International Convention Center, Taiwan, June 9-11, 2008)
3. P. C. Yang, H. Y. Chang, C. H. Yang, C. Y. Hsueh, H. W. Lin, C. Y. Chang and S. C. Lee, “Low Temperature Polycrystalline Silicon TFTs on Polyimide and Glass Substrates”, 2007 IEEE International Conference on Electron Devices and Solid-State Circuits, Tainan, Taiwan, Dec, 2007.
4. Y. L. Chu, H. W. Lin, C. T. Huang, P. C. Yang, C. Y. Huang, and S. C. Lee, 2007, “A New Compensation Pixel Circuit for Threshold Voltage Shift Based On A 4T 1C a-Si:H Thin Film Transistor”, 2007 International Electron Devices Materials Symposiums (IEDMS), HsinChu, Taiwan, Dec. ,2007.
5. R. J. Shiue, T. Y. Cho, C. H. Yang, P. C. Yang, C. Y. Yang, C. C. Wu and S. C. Lee, 2007, “The 4×4 Energy-recycling Organic Light Emittimg Diode Array”, 2007 International Electron Devices Materials Symposiums (IEDMS), HsinChu, Taiwan, Dec. 2007.
6. C. Y. Chen, M. W. Tasi, T. H. Chuang, Y. T. Chang and S. C. Lee, “Remotely Coupled Surface Plasmons in a Plasmonc Thermal Emitter,” 2006, International Electron Devices and Materials Symposium (IEDMS), Tainan, Taiwan.
7. M. W. Tsai, T. H. Chuang, C. Y. Chen and S. C. Lee, “The Characteristics of Mid-infrared Narrow-band Plasmonic Thermal Emitter,” 2006, International Electron Devices and Materials Symposium (IEDMS), Tainan, Taiwan .
8. 劉劍輝，謝長倭，謝昭賢，王志弘，李嗣涔，陳志宏， 2005 ， “ 應用功能性磁振造影技術探索無為法靜坐引?中松果體之反應 ”, 中華民國醫學工程科技研討會 , 論文編號： pp. 3-023 。
9. M. W. Tsai, T. H. Chuang and S. C. Lee , 2005, “Influence of Hole size on Extraordinary Transmission through Periodic Perforated Hole Arrays”, 2005 Electron Devices and Materials Symposium (EDMS), Kao-Hsiung, Taiwan.
10. 劉劍輝，謝長倭，謝昭賢，王志弘，李嗣涔，陳志宏， 2005 ， “ 中國正宗靜坐的大腦反應現象及生理意義研究 ” ， 2005 年中華生命電磁科學學會 ，台北，台灣。
11. 李嗣涔， 2004 ，“ 隱祕物質、隱祕能量與信息場 —21 世紀的新科學”，未來科學與文化研討會邀請演講，台北，台灣。
12. 劉劍輝，謝昭賢，李嗣涔，方識欽，謝長倭，陳志宏， 2004 ， “ 應用功能性磁共振影像技術探索中國正宗靜坐之大腦反應現象 ” ， 2004 中華生命電磁科學學會，台北，台灣。
13. 李嗣涔， 2004 ，“ 隱祕物質、隱祕能量與信息場”， 2004 年中華生命電磁科學學會大會邀請演講，台北，台灣。
14. S. D. Liu K. H. Lee and S. C. Lee , 2003, ”Large Grain Poly-Si (~10 μ m) Prepared by Excimer Laser Annealing through a Thick SiON Absorption Layer”, 2003 Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, pp. 848-851.
15. S. D. Liu K. H. Lee and S. C. Lee , 2003, ”Large Grain Poly-Si (~10 μ m) Prepared by Excimer Laser Annealing through a Thick SiON Absorption Layer”, 2003 Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, pp. 848-851.
16. C. Y. Meng and S. C. Lee , 2003, “A New Body-contact Structure to Improve the Reliability of Low Temperature Poly-Si Thin Film Transistor (TFT)”, 2003 Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, pp. 839-842.
17. M. W. Tsai, S. D. Chen and S. C. Lee , 2003, “Transport Characteristics of InAs/GaAs Quantum-Dot Infrared Photodetector”, 2003 Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, pp. 498-500.
18. M. W. Tsai, Y. Y. Chen and S. C. Lee , 2003, “The Role of Stress on the Electronic Properties of InAs/GaAs Quantum Dots”, 2003 Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, pp. 495-497.
19. S. C. Lee , 2003, “Low Temperature Poly-Si Thin Film Transistor for Liquid Crystal Display”, 2003 Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan. (Invited Planar Talk)
20. 李嗣涔， 2003 ，“遨遊有形 ( 宇宙 ) 與無形界 ( 信息場 ) ”， 2003 年中華生命電磁科學學會大會邀請演講，台北，台灣。
21. S. D. Chen, M. W. Tsai, S. C. Lee , 2002, “Study of Photo-voltaic Effect in Quantum Dot Infrared Photodetector”, 2002 Optics and Photonics, Taiwan.
22. 李嗣涔， 2002 ，“與信息場對話 ” ， 2002 年中華生命電磁科學學會大會邀請演講，台北，台灣。
23. C. Y. Meng, Y. S. Tseng, S. C. Lee , 2001, “Nickel Induced Lateral Crystallization of Poly-Si Thin Film Transistros”, 2001 Electronics Devices and materials Symposium (EDMS), Kaoshung, Taiwan.
24. S. D. Chen, C. Y. Tsai, and S. C. Lee , 2001, “Phase Separation growth of InGaAs caplayer on InAs/GaAs quantum dot”, 2001 Electronics Devices and Materials Symposium (EDMS), Kaoshung, Taiwan.
25. 李嗣涔， 2001 ，“手指識字關鍵字與信息場的聯繫模式”， 2001 年中華生命電磁科學學會大會邀請演講，台北，台灣。
26. 李嗣涔， 2000 ，“手指識字辨識關鍵字所產生的異象”， 2000 年中華生命電磁科學學會大會邀請演講，台北，台灣。
27. 廖友誠 , 林時彥 , 李嗣涔， 2000, “Spherical SiGe Quantum Dots prepared by Thermal Evaporation Method”, 第二屆奈米材料展望研討會，台北，台灣。
28. S. F. Tang, S. Y. Lin, K. H. Huang, C. M. Yang, Y. C. Cheng, and S. C. Lee , 2000, “Study for Temperature Dependent Photoluminescence of Stacked InAs/GaAs Quantum Dot Superlattice structure”, Symposium on Nano Device Technology 2000, Hsin-Chu, Taiwan.

1999-1990

1. 李嗣涔， 1999 ，“人體特異功能－走向深層的真實世界”， 1999 年中華生命電磁科學學會大會邀請演講，台北，台灣。
2. S. C. Lee , 1999, “High Field-effect-mobility Deuterated Amorphous Silicon Thin Film Transistors Based on the Substitution of Hydrogen with Deuterium”, 1999 EDMS, Linko , Taiwan , pp. 423. (Invited Talk).
3. S. F. Tang, S. Y. Lin, Y. C. Liao and S. C. Lee , 1999, “Infrared Absorption Spectra of Self-organized InAs/GaAs Quantum Dot Device”, 1999 Taiwan Electro-optical Technology Meeting, Chun-Li, Taiwan.
4. 李嗣涔， 1999 ，“心物合一與宏觀量子現象 ” ，第五屆生物能場研討會，台北，台灣。
5. J. L. Yeh, H. L. Chen, Y. F. Hsiou and S.C. Lee , 1999, “The Improvement of Characteristics of Poly-Silicon Thin Film Transistor by Substitution of Hydrogen Passivation with Deuterium”, The Sixth Symp. on Nano Device Technology, Hsinchu , Taiwan .
6. 李嗣涔， 1998 ，“心物合一︰由手指識字到念力彎物”，第五屆佛學與科學研討會論文集，台北，台灣。
7. 李嗣涔， 1998 ，“手指識字之生理機制—第三眼”，第四屆生物能場研討會 ( 氣與身心 ) ，台北，台灣。
8. 李嗣涔， 1997 ，“氣功與人體特異功能的科學觀”，《宗教、靈異、科學與社會》研討會，台北，台灣，第 233 至 264 頁。
9. Y. P. Chou, J. H. Wei and S.C. Lee , 1997, “Evidence for the Void Size Related IR Absorption Frequency Shifts in Amorphous Silicon (Germanium) Films”, 1997 EDMS, Chung-Li, Taiwan, pp. 516-519.
10. C. H. Chiang, C. T. Liu and S. C. Lee , 1997, “Double Heterostructure Light Emitting Diode Using Multiquantum Barrier Structure”, 1997 EDMS, Chung-Li, Taiwan, pp. 486-489.
11. J. H. Wei and S. C. Lee , 1997, “The Retardation of Aluminum-Amorphous Silicon Interaction by Phosphine Plasma Treatment”, 1997 EDMS, Chung-Li , Taiwan , pp. 349-352.
12. Y. P. Chou, J. H. Wei and S. C. Lee , 1997, “The Study of Structural Change of Hydrogenated Amorphous Silicon Germanium Alloy (a-SiGe:H) By IR Spectroscopy”, 1997 EDMS, Chung-Li , Taiwan , pp. 345-348.
13. M. S Sun, J. H. Wei, A. Shih and S. C. Lee, 1997, “Improved Light-Induced Degradation In Deuterated Amorphous Silicon Alloy”, 1997 EDMS, Chung-Li, Taiwan, pp. 334-337.
14. R. M. Lin, S. C. Lee, H. H Lin, L.Zen Hsieh, and X. J Guo, 1997, “A Study of Self-Organized InAs Quantum Dots On GaAs”, 1997 EDMS, Chung-Li, Taiwan, pp. 253-256.
15. R. M. Lin, S. C. Lee, H. H. Lin, Y. T. Dai, and Y. F. Chen, 1997, “Temperature Dependent Photoluminescencee Spectra in Self-Organized InAs Quantum Dots Grown on GaAs”, The Sixth National Conf. on Science and Technology of National Defense, Ta-Hsi, Tao-Yuan, Taiwan, Nov. 1997.
16. 李嗣涔， 1996 ，“手指識字之研究”，第三屆生物能場研討會 ( 經絡、外氣、氣功、養生法及人體潛能 ) ，台北，台灣。
17. 李嗣涔 , 1996 ， ” 特異功能（神通）與科學 “, 第四屆佛學與科學研討會論文集，台北，台灣， pp. 45-57.
18. 李嗣涔， 1995 ，“人體潛能研究—心電感應，手指識字及念力”，第二屆生物能場研討會 ( 氣功、經絡及傅爾電針之應用 ) ，台北，台灣。
19. S. C. Lee, 1995, “Electromagnetic Phenomenon During Psychokinesis”, 1995 General Ass. of international Sci. Radio Union, Kaohsiung , Taiwan , August 1995.
20. J. L. Yeh and S. C. Lee , 1995,” Structural and Optical Properties of Amorphous Silicon Oxynitride “, 1995 EDMS, Kaohsiung , Taiwan , pp. 178-183.
21. K.C. Lin and S. C. Lee, 1995, ” A Novel Angle Position Detector For Application to Patten Recognition, 1995 EDMS, Kaohsiung, Taiwan, pp. 167-171.
22. B. D. Liu, S. C. Lee, T. P. Sun and G. S. Chen 1995, “Observation of Avalanche Multiplication in Low BandGap InSb Infrared Photodiode”, 1995 EDMS, Kaohsiung, Taiwan, pp. 109-114.
23. 李嗣涔 , 1994, ” 氣功的科學觀 “, 第一屆生物能場研討會（氣功、經絡及傅爾電針之應用） , 台北 , 台灣。
24. S. Z. Chang and S. C. Lee , 1993, “Magneto-Optical Studies of Highly Mismatched In x Ga 1-x As on GaAs by Molecular Beam Epitaxy”, 1993 EDMS, Chung-Li, Taiwan, pp. 418-421.
25. B. D. Liu, S. C. Lee , K. C. Liu, T. P. Sun and S. J. Yang, 1993, “High Breakdown Voltage InSb p-channel MOSFET Prepared by photo-Enhanced Chemical Vapor Depositio”, 1993 EDMS, Chung-Li, Taiwan, pp.159-162.
26. K. C. Lin and S. C. Lee , 1993, “The Hydrogenated Amorphous Silicon Active Hollow Four Quadrant Orientation Detector for Application to Neural Network Image Sensors”, 1993 EDMS, Chung-Li , Taiwan , pp. 52-55.
27. T. H. Shieh and S. C. Lee , 1993, “DX Center Related Tunneling Peak in the Al x Ga 1-x As/AlAs/Al x Ga 1-x As/AlAs/Al x Ga 1-x As (0.4 ≦ x ≦ 0.5) Resonant Tunneling Diodes”, 1993 EDMS, Chung-Li, Taiwan, pp. 36-39.
28. W. J. Sah and S. C. Lee , 1993, “The a-Si:H Orientation Detector Array”, Workshop on Neural Network, Taipei , Taiwan .
29. C. C. Wu, S. C. Lee , and H. H. Lin, 1991, “AlGaAs/GaAs Heterojunction Bipolar Transistors with High current Gain Grown by Molecular Beam Epitaxy”, 17th EDMS, Taipei, Taiwan, pp. 343-346.
30. H. C. Lin, W. J. Sah, and S. C. Lee , 1991, “The Common Gate CMOS With Amorphous Thin Film Transistor on Top of Crystalline PMOS” ,17th EDMS, Taipei , Taiwan , pp. 492-495.
31. T. H. Shieh, P. D. Liu, M. Y. Wu, T. C. Chang, S. C. Lee , and H. H. Lin, 1991, “Infrared Detector Using Heavily be Doped GaAs”, 17th EDMS, Taipei, Taiwan, pp. 562-565.
32. C. H. Chen and S. C. Lee , 1991, “A Monolithic Integration of an AlGaAs/GaAs Surface Emitting Laser Diode and a Photodetector”, 17th EDMS, Taipei , Taiwan , pp. 420-423.
33. K. C. Lin and S. C. Lee , 1991, “The Structural Properties of a-SIN x :H Prepared by Plasma Enhanced Chemical Vapor Deposition”, 17th EDMS, Taipei , Taiwan , pp. 472-475.
34. J. S. Jou, W. J. Sah, and S. C. Lee , 1991, “Microcrystalline Silicon Deposited by Glow Discharge Decomposition of Heavily-diluted Silane”, 17th EDMS, Taipei , Taiwan , pp. 468-471.
35. S. C. Lee , 1990, “Physical and Electronic Structure of Amorphous Silicon Carbon Hydrogen Alloy”, Symposium on Frontiers in Condensed Matter Sciences, Taipei , Taiwan .

1989-1983

1. S. C. Lee , 1989, “Model for Vision Illusion and Its Application to Pattern Representation”, 1989 Telecommunication Symposium, Taipei , Taiwan , pp. 207-213.
2. Wen Jyh Sah, Jyh Ling Lin and S. C. Lee , 1989, “High Performance a-Si:H Thin Film Transistor Using Lightly Doped Channel, 15th EDMS, Taipei, Taiwan, p. 305.
3. Jyh Ling Lin, Wen Jyh Sah and S. C. Lee , 1989, “Theoretical Analysis of Channel-Doped Amorphous Silicon Field-Effect Transistors”, 15th EDMS, Taipei , Taiwan , p. 300.
4. S. C. Lee , 1989, “Physical and Electronic Structure of Amorphous Silicon (Carbon) Hydrogen Alloy”, 15th, EDMS, Taipei , Taiwan , p. 227.
5. Ta Chung Wu and S. C. Lee , 1989, “High Power, Nearly Diffraction-limited Beam Output of a Double Y-junction Diode Laser Array”, 15th EDMS, Taipei , Taiwan , p. 224.
6. Jing Lung Ting, Hao Hsiung Lin and S. C. Lee , 1989, “Fabrication and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HJBT’s) Using a New Emitter-edge-thinning”, 15th EDMS, Taipei , Taiwan , p. 213.
7. Chung Cheng Wu, Jing Lung Ting and S. C. Lee , 1989, “The Origin of the Surface 2kT Recombination Current of Heterojunction Bipolar Transistor”, 15th EDMS, Taipei , Taiwan , p. 208.
8. S. C. Lee , 1989, “The Generation of Chi by Stimulation Methods”, Symposium on Recent Development of Acupuncture Research & Clinical Application, Taichung , Taiwan .
9. G. S. Lee, J. G. Hwu, S. C. Lee and W. S. Wang, 1987, “Charge Temperature Effects on Co-60 Irradiated MOS Capacitor”, 13th EDMS, Taipei, Taiwan, p. 177.
10. H. K. Tsai and S. C. Lee , 1987, “The Amorphous SiC/Si Three Color Detector”, 13th EDMS, Taipei , Taiwan , p. 219.
11. W. J. Tzeng and S. C. Lee , 1987, “Photodegradation Kinetics of a-Si:H”, 13th EDMS, Taipei , Taiwan , p. 211.
12. W. L. Lin, H. K. Tsai, W. J. Sah and S. C. Lee , 1987, “The Characteristics of a-SiC:H”, 13th EDMS, Taipei, Taiwan, p. 200.
13. C. W. Liu, S. L. Cheng, J. P. Lay, S. C. Lee and H. H. Lin, 1987, “The Characteristics of Silane Doping of GaAs by MOCVD”, 13th EDMS, Taipei, Taiwan, p. 77.
14. C. Z. Chen, S. C. Lee and H. H. Lin, 1987, “The Hot Electron Effect in Double Heterojunction Bipolar Transistors: Theory and Experiment”, 13th EDMS, Taipei , Taiwan , p. 24.
15. Y. W. Shen and S. C. Lee , 1987, “Nonuniform Reflective Diffraction Coupled Laser Array”, 13th EDMS, Taipei , Taiwan , p. 12.
16. S. C. Lee and H. K. Tsai, 1987, “The Amorphous SiC/Si Color Detector”, Joint Chinese-American Sensor Workshop, Hsinchu , Taiwan .
17. W. J. Tzeng, H. K. Tsai and S. C. Lee , 1986, “Annealing Kinetics of Photodegraded a-Si:H”, Digest of Silicon Material Research Symposium, Hsinchu , Taiwan , p. 26.
18. H. K. Tsai, W. J. Tzeng and S. C. Lee , 1986, “Origin of Boron Contamination of Intrinsic a-Si:H in Glow Discharge”, Digest of Silicon Material Research Symposium, Hsinchu , Taiwan , p. 25.
19. C. Z. Chen and S. C. Lee , 1986, “The Reduction of the Surface Recombination Current by Sandwiching a p-type AlGaAs in the Emitter-Base Interface of AlGaAs Double Heterojunction Bipolar Transistors”, 12th EDMS, Tainan, Taiwan, p. 328.
20. H. C. Lee, S. C. Lee , H. H. Lin and F. C. Hwang, 1986, “Evalution of DX-center in Sn-doped Al x Ga 1-x As”, 12th EDMS, Tainan , Taiwan , p. 314.
21. L. C. Suen and S. C. Lee , 1986, “AlGaAs/GaAs Ridge Waveguide Laser Array”, 12th EDMS, Tainan , Taiwan , p. 129.
22. J. K. Chen and S. C. Lee , 1986, “AlGaAs/GaAs Visible Ridge Waveguide Laser by Multicavity Structure”, 12th EDMS, Tainan , Taiwan .
23. S. C. Lee , 1986, “Long-time Repeated Lifetest of a-Si:H”, Syposium on Amorphous Silicon Physics and Devices”, Hsinchu , Taiwan , August.
24. H. K. Tsai, W. J. Tzeng and S. C. Lee , 1985, “High Quality a-Si:H Prepared by low frequency Glow-Discharge”, 11th EDMS, Hsinchu , Taiwan , p. 217.
25. H. K. Chiou and S. C. Lee , 1985, “AlGaAs/GaAs Buried Heterostructure Lasers”, 11th EDMS, Hsinchu , Taiwan , p. 73.
26. T. P. Sun and S. C. Lee , 1985, “p-( Al , Ga )As/GaAs Modulation-doped Heterostructure”, 11th EDMS, Hsinchu , Taiwan , p.69.
27. H. H. Lin and S. C. Lee , 1985, “AlGaAs/GaAs Single Heterojunction Bipolar Transistors with a Common Emitter Current Gain of 12500”, 11th EDMS, Hsinchu , Taiwan , p.65.
28. S. C. Lee and H. H. Lin, 1985, “Theory on the AlGaAs Double Heterojunction Transistor”, 11th EDMS, Hsinchu, Taiwan, p. 61.
29. J. A. Chen, S. C. Lee and T. I. Ho, 1985, “On the Etching Mechanism of Potassium Peroxodisulfate for the Semiconductor GaAs”, 2nd International Electrochemical Symposium, Tainan, Taiwan.
30. H. K. Tsai, W. J. Tzeng, S. C. Lee and C. S. Hong, 1985, “Stability of a-Si:H”, Proc. 1985 Annual Conf. of Chinese Society for Materials Science, Taipei, Taiwan, p. 250.
31. J. A. Chen, S. C. Lee and T. I. Ho, 1985, “A New Etching Solution, K 2 S 2 O 8 , for GaAs”, Proc. 1985 Annual Conf. of Chinese Society for Materials Science, Taipei, Taiwan, p. 247.
32. H. K. Chiou, C. Z. Chen and S. C. Lee , 1985, “AlGaAs Buried Heterostructure Lasers”, Proc. 1985 Annual Conf. of Chinese Society for Material Science, Taipei, Taiwan, p. 224.
33. M. H. Shieh, J. A. Chen, H. H. Lin, S. C. Lee and Y. L. Chiou, 1984, “AlGaAs/GaAs Stripe Geometry Double-Heterostructure Lasers”, Annual Meeting of the Chinese Material Science Association, Tainan, Taiwan, p. 248.
34. H. H. Lin, J. S. Lin, H. K. Chiou and S. C. Lee , 1984, “Determination of AlGaAs G 15 -G 1 Bandgap Energy by Schottky Barrier Spectral Response Measurement”, Annual Meeting of the Chinese Material Science Association, Tainan, Taiwan. p. 225.
35. S. C. Lee and H. H. Lin, 1983, “AlGaAs-GaAs Dual-Wavelength Photodetectors for WDM Technologies”, 9th EDMS, Taipei , Taiwan , p. 319.
36. S. C. Lee , 1983, “Hydrogen Diffusion in Hydrogen-Implanted Amorphous Si”, 9th ROC Electron Devices and Materials Symposium (EDMS), Taipei , Taiwan , p. 70.
37. S. C. Lee , 1983, “Characterization of PIN a-Si:H:F Solar Cells”, 2nd ROC Solar Cell Workshop, Hsinchu , Taiwan .
38. S. C. Lee and S. S. Chao, 1983, “Percolation Process in High Conductivity Phosphorus- Doped Amorphous Si:H:F Alloys”, Annual Meeting of the Chinese Material Science Association, Kaohsiung, Taiwan. p. 28.

D、Books

1. 李嗣涔，管傑雄，孫台平合著，“半導體元件物理”，三民書局，台北， 1995 。( 獲第 20 屆金鼎獎）